Ag-Sb-S Thin Films Prepared by RF Magnetron Sputtering and Their Properties
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0918-H07-01-G08-01
Ag-Sb-S Thin Films Prepared by RF Magnetron Sputtering and Their Properties Jan Gutwirth1, Tomas Wagner1, Milan Vlcek2, Cestmir Drasar3, Ludvik Benes2, Martin Hrdlicka1, Miloslav Frumar1, Jiri Schwarz1, and Helena Ticha1 1 Department of General and Inoraganic Chemistry, University of Pardubice, Legion's sq. 565, Pardubice, 532 10, Czech Republic 2 Joint Laboratory of Solid State Cemistry of UPa and AS CR, University of Pardubice, Studentska 84, Pardubice, 532 10, Czech Republic 3 Department of Physics, University of Pardubice, Studentska 84, Pardubice, 532 10, Czech Republic
ABSTRACT One of the recent applications of thin chalcogenide films is rewritable optical data recording. This technology is based on a reversible phase transition between the crystalline and amorphous state and vice versa. Dominant materials for rewritable optical recording are Ge-Sb-Te and Ag-In-Sb-Te alloys. Material research still continues due to the need for increasing storage capacity and data rates. Thin Ag-Sb-S films were prepared by RF magnetron sputtering as potential candidates for rewritable optical data storage films. There were prepared polycrystalline bulk samples of AgSbS2. Composition and homogeneity of these bulk samples were checked by scanning electron microscopy with energy dispersive analysis (SEM-EDX). Structure and bonding relations were studied by Raman spectroscopy and X-ray diffraction (XRD). Targets for RF magnetron sputtering were prepared from pulverized bulk samples by hot pressing technique. Targets were characterized the same way as bulk samples. Composition and homogeneity of prepared thin films were characterized by SEM-EDX, character (amorphous/crystalline) was studied by XRD. Optical properties (spectral dependence of refractive index) were evaluated on the basis of UV-Vis-NIR spectroscopy and variable angle spectral ellipsometry (VASE). Crystallization abilities were traced by the thermal dependence of the optical transmission of prepared thin films. INTRODUCTION One important application area of chalcogenide materials is rewritable optical data recording (RW ODR). Materials used for active recording films are currently based on Sb-Te alloys [1]. Mostly used materials are from the Ge-Sb-Te (GST) [2] system and from the Ag-In-Sb-Te (AIST) [3] system. On the basis of Density Functional Theory (DFT) calculations [4], chalcogenide materials from AgSbCh2 group, where Ch is S, Se or Te look promising for application as active recording films. This paper deals with preparation of Ag-Sb-S thin films by RF magnetron sputtering and their comparison with thin films from the same system prepared by different techniques,
i.e. pulsed laser deposition [5] and thermal evaporation or spincoating of Sb-S host film combined with optically induced diffusion and dissolution of Ag [6, 7]. EXPERIMENT AgSbS2 bulk samples were prepared by a well established melt-quenching technique in an electric rocking furnace. Synthesis was done from elements of 5N purity in a precleaned and evacuated (preliminary pressure
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