Book Reviews

  • PDF / 442,013 Bytes
  • 2 Pages / 604.8 x 806.4 pts Page_size
  • 27 Downloads / 156 Views

DOWNLOAD

REPORT


Diluted Magnetic Semiconductors fol. 25, Semiconductors and emimetals) Edited by Jacek K. Furdyna and Jacek Kossut

g

(Académie Press, 1988), 470pages. ISBN: 0-12-752125-9

Diluted magnetic semiconductors (DMS) —typically the tetrahedrally coordinated IIVI semiconductors such as CdTe in which the cations hâve been replaced by transition métal ions (e.g., Mn2+)—hâve attracted considérable attention from the scientific community in récent years, because of the DMS' striking magnetic phenomena owing to the large spin-spin exchange interaction between localized moments of the d électrons of the transition métal ion and the band électrons. For this reason and the fact that no other complète text exists on this subject, this work is a timely and valuable product. There are three aspects of DMS properties that make thèse materials interesting subjects for scientific investigation. The first one is semiconducting properties per se; that is, how the band structures of host semiconductors can be varied by doping the transition métal ions. Second, purely magnetic properties of DMS encompass a very broad spectrum of behavior, including paramagnetic, spin-glass, and antiferromagnetic properties. Third, the large exchange interaction between localized magnetic moments and band électrons results in various remarkable features (i.e., the huge Faraday rotation of the visible and near infrared light in wide-gap DMS and the giant négative magneto-resistance near the semiconductor-semimetal transition in narrow-gap DMS). This ten-chapter book provides excellent descriptions of thèse three aspects of DMS properties. The first two chapters describe the crystal structures, methods of préparation, and semiconducting properties (mostly optical) of DMS in the absence of magnetic fields. Thèse are followed by two chapters devoted to the magnetic proper-

this book, it is necessary to measure dopants at the ppm level and adventitious impurities at the ppb level not only in the bulk substrate material but also in métal, dielectric, and organic thin films and their interfaces. Electronic device scaling to smaller and smaller feature sizes has also played an important rôle in the rapid évolution in the microbeam analysis capabilities of many surface analysis tools. Without a doubt, the research, development, and manufacturing of semiconductor devices require an extensive array of analytical tools, not only for elemental détermination and chemical state identification by chemical and microbeam methods but Reviewer: Hiroshi Kamimum is professor ofthealso for device parameter characterization oreticalphysics, Department ofPhysics, anddiby electrical measurements. rector of the Meson Science Laboratory, at the The need for a fundamental text, such as Universityof Tokyo. He is the past chairman of the subject of this review, that describes the Department and the chairman ofthe 1UPAP the various semiconductor materials charSemiconductor Commission. acterization technologies, is dearly important for individuals operating in this field. This text serve