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Polycrystalline Semiconductors, Grain Boundaries and Interfaces Editedby H.J. Moller, H.P. Strunk, J.H. Werner
line semiconductors are represented there. jor aim of this chapter, however, is to exThis inclusive, if not comprehensive, feaplain the design methodology required for ture of the proceedings makes it an excelbrittle materials. In this respect, the chapand lent source of référence for state-of-the-art ter is quite successful, laying out the necesresearch, not sary theory and illustrating the approach to mention the intrinsic value (Springer-Verlag, Berlin, 1989), 391 pages. with a simple example. The "textbook" apof the reported results. Nevertheless, the ISBN: 0-387-50887-2 utility of this proceedings, for any purproach of this chapter is instructive—one While the study of semiconductor grain ends up wishing for more. Indeed, this pose, would hâve been increased substanboundaries and interfaces has a long hischapter, if expanded, would be a suitable tially by the addition of a subject index tory, especiaUy for silicon, the advent of which referenced spécifie techniques and topic for a complète text. The only imporatomic-scale, high-resolution microscopies tant omission from this chapter was the properties. has allowed a detailed corrélation of their methodology that has been advanced reThe papers are primarily written at the defect microstructure with fabrication concently for time-dependent strength effects, specialist level as one would expect for a ditions and electrical properties. The pae.g., stress corrosion. symposium. However, included are 12 papers in this proceedings (the international pers written by invited speakers which reThe next two chapters look at spécifie symposium was held in Malente, W. Gerview the current status of knowledge and non-oxide ceramic materials, the silicon many, August 29 - September 2, 1988) exongoing investigations of semiconductor carbide and silicon nitride families of mateploit this new level of characterization, and grain boundaries and interfaces, and rials. Thèse chapters emphasize apthis is easily the book's outstanding feawhich should be generally compréhensiproaches used in the fabrication of thèse rure. Nearly half of the figures, numerous ble to materials scientists at even the gradmaterials and discuss their resulting meat about one per page, are électron microuate level. chanical properties. Both chapters provide graphs. There is even one paper with color a useful set of références for thèse materiplates of spectroscopic STM (scanning tun- Reviewer: Gordon E. Pike, supervisor, Elecals. The chapter on silicon carbide provides neling microscopy) images of grain boundtronic Properties of Materials Division, Sandia a aries in silicon and CuInSe2. National Laboratories, has published expéri-very extensive review of the research effort, while that on the silicon nitride matemental and theoretical papers on the electronic However, the papers do not deal exclurials is rather terse. In both chapters, the properties of semiconductor grain boundaries, sively with mi
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