Bulk- or interface-limited electrical conductions in IrO 2 /(Ba,Sr)TiO 3 /IrO 2 thin film capacitors
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The electrical conduction behavior of sputter-grown (Ba,Sr)TiO3 thin films having IrO2 electrodes were studied under the assumption of a fully accumulated film having a negative space charge density of 1 × 1019 cm−3 at 25 °C. The negative space charge decreased the actual field strength in the film and resulted in a decreasing leakage current with increasing film thickness at a given applied field. The current conduction in a very low field, roughly less than 150 KV/cm, showed a linear current density–voltage (J–V) behavior at 25 °C. From that field to about 420 KV/cm, the bulk-limited Poole–Frenkel mechanism controlled the overall conduction property at room temperature. Under high field strength, from 420 KV/cm to 1 MV/cm, the interface-limited thermionic field emission mechanism was dominant. The dielectric constant obtained from Poole–Frenkel fitting was approximately 300 ± 50 at 25 °C, which was in qualitative agreement with the value obtained from low-frequency capacitance measurements. The detailed mechanisms of the linear and nonlinear field-dependent emission conductions were discussed with reference to the direction of band bending, not to the carrier concentration.
I. INTRODUCTION
(Ba,Sr)TiO3 (BST) thin films are attracting great interest for use as a capacitor dielectric layer for the next generation of ultra-large-scale integrated dynamic random access memory (ULSI DRAM) devices.1–6 For practical use in DRAMs, having a design rule of
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