Carbon Films Produced by the Pulsed Laser Method and Their Influence on the Properties of GaAs Structures
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INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020
Carbon Films Produced by the Pulsed Laser Method and Their Influence on the Properties of GaAs Structures Yu. A. Danilova,b,*, M. V. Ved’b, O. V. Vikhrovab, N. V. Dikarevab, M. N. Drozdovc, B. N. Zvonkovb, V. A. Kovalskiyd, R. N. Kriukovb, A. V. Kudrina,b, V. P. Lesnikovb, P. A. Yuninc, and A. M. Andreeva a Lobachevsky
b
State University of Nizhny Novgorod, Nizhny Novgorod, 603950 Russia Physical Technical Research Institute, Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, 603950 Russia c Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, 603950 Russia d Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow region, 142432 Russia *e-mail: [email protected] Received April 15, 2020; revised April 21, 2020; accepted April 21, 2020
Abstract—The properties of carbon layers produced on GaAs substrates by the pulsed laser sputtering of pyrolytic graphite in vacuum are studied. The optimal deposition temperature is 500°C; in this case, the growth rate of carbon layers is 0.19 nm s–1. The Raman spectra correspond to the spectrum of nanocrystalline graphite. The carbon layers possess p-type conductivity, exhibit a semiconductor-type temperature dependence of the resistance, and are used as a conductive transparent coating of GaAs structures with an InGaAs quantum well. The structures show noticeable electroluminescence even at small pump currents and are photosensitive in the range 1.5–2.2 eV at up to room temperature of measurements. Keywords: carbon nanolayers, graphene, electroluminescence DOI: 10.1134/S1063782620090079
1. INTRODUCTION Carbon nanostructures, among them graphene layers, attract considerable interest due to their remarkable physical properties, such as high thermal conductivity, high electrical conductivity, and compatibility with present-day semiconductor microelectronics. Carbon layers find efficient application in the technology of various optoelectronic semiconductor devices, for example, for the transparent contact coatings of solar cells [1]. A number of methods for forming carbon nanolayers on the surface of solids are known [2]. (For optoelectronics, of interest are, first and foremost, the surfaces of semiconductors and semiconductor heterostructures.) Although the classical method of the micromechanical exfoliation of graphite [3] allows one to obtain even single-layer graphene, the lateral size of graphene flakes is small, and the transfer of a carbon layer to the surface of the solid structure presents a difficult problem. The liquid-phase exfoliation of graphite powder upon ultrasonic treatment followed by centrifugation makes it possible to produce suspensions containing graphene flakes with certain distributions according to the number of layers [4], with the distributions depending on the conditions of
treatment. Subsequent deposition onto the surface of semiconductor or ins
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