CdTe, ZnTe and Cd 1-X Zn X Te Nanolayers Grown by Atomic Layer Deposition on GaSb and GaAs (001) Oriented Substrates
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CdTe, ZnTe and Cd1-XZnXTe Nanolayers Grown by Atomic Layer Deposition on GaSb and GaAs (001) Oriented Substrates J. E. Flores-Mena1, R. S. Castillo-Ojeda2, J. Díaz-Reyes3, M. Galván-Arellano4, F. de AndaSalazar5 1
Facultad de Ciencias de la Electrónica de la BUAP, Av. San Claudio y 18 Sur Colonia Jardines de San Manuel, Ciudad Universitaria, 72500, Puebla, Puebla, México. 2 Universidad Politécnica de Pachuca, Km. 20, Rancho Luna, Ex-Hacienda de Santa Bárbara, Municipio de Zempoala, Hidalgo. 43830. México. 3 Centro de Investigación en Biotecnología Aplicada, Instituto Politécnico Nacional. Ex– Hacienda de San Juan Molino, Km. 1.5. Tepetitla, Tlaxcala. 90700. México. 4 Depto. de Ingeniería Eléctrica, SEES, CINVESTAV-IPN. Apartado Postal 14-740, México, D. F. 07000. México. 5 IICO-UASLP Ave. Karakorum 1470, Lomas 4ª Sección. Álvaro Obregón 64, San Luis Potosí, S.L.P. C.P. 78210. México. Email: [email protected]
ABSTRACT In this work are presented the results obtained from ZnTe, CdTe and Cd1-xZnxTe growth on GaSb and GaAs (001) oriented substrates by the regimen of Atomic Layer Deposition (ALD). The growths were performed by exposing the substrates alternatively to the elemental vapor sources for the case of ZnTe and CdTe and to the vapors of a solid solution in the case of Cd1-xZnxTe. Ellipsometric measurements showed that the value of the thickness per cycle was around 0.3 nm. That correspond to the value corresponding to a monolayer of ZnTe. As a result of High-resolution X-ray diffraction measurements it can be identified the mechanism of interface dislocation generation in the growth interface as the relaxation of the layers, additional the value of the full width at half maximum (FWHM) result about 300 to 600 arcsec, indicating a large density of dislocation.
INTRODUCTION Among the most successful materials used for the detector device fabrication are ZnTe, CdTe and their respective alloys Cd1-xZnxTe (CZT). These materials in its nanostructured forms are promising for the production of potential new electronic devices [1]. The ternary alloy can provide a modulated wide band gap tuning with the variation of the molar fraction x. The band gap can be modulated from 1.45 eV to 2.25 eV property used for designing a large variety of radiation detectors [2], including a spectrum region from the infrared to the green, taking advantage of its well-known high detective quantum efficiency. With the discovery of the new properties arising from the nanostructured materials, the growth of nanolayers has gained renewed importance. Moreover, it is possible to take advantage of the properties of IIIV materials as GaAs and GaSb when are used as substrates. GaSb is an important material used extensively for the infrared radiation detection. In addition, its lattice parameter is close to the ZnTe one, making it very attractive for its use as substrate however it is well known
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