Chemical processes accompanying the formation of modified ruthenium resistors and their functional properties
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Russian Chemical Bulletin, International Edition, Vol. 69, No. 9, pp. 1724—1730, September, 2020
Chemical processes accompanying the formation of modified ruthenium resistors and their functional properties* A. N. Lopanov,a N. S. Lozinskyy,b and Ya. A. Morozb aV.
G. Shukhov Belgorod State Technological University, 46 ul. Kostyukova, 308012 Belgorod, Russian Federation bL. M. Litvinenko Institute of Physical Organic and Coal Chemistry, 70 ul. R. Lyuksemburg, 83114 Donetsk, Ukraine. E-mail: [email protected] The chemical processes of manufacturing thick-film ruthenium resistors, which are accompanied by an acid-base interaction between the inorganic components of the paste, were studied. The regularities of composition formation and consumer properties of the resistors were determined. Key words: thick-film resistors, modifying additives, properties of resistors.
The introduction of some metals to resistive materials is widely used in thick-film microelectronics as a method for controlling their temperature coefficient of resistance (TCR).1,2 The modifying effect exerted by these oxides on the properties of thick-film resistors (TFR) is due to at least three factors: influence of oxide as one of the components increasing the fraction of the phase with the metallic or semiconductor conductivity, influence of the modifier on the properties of a constant binder (CB) inducing a change in the parameters of the TFR, and influence of the additive on the properties of the current conducting phase (CCP) or the surface of its particles due to the formation of a chemical compound or a solid solution.3—5 The purpose of this work is to explain the effect of the most propagated modifying oxides on the specific surface resistance (ρs) and TCR of thick-film resistors from the viewpoint of the chemical interaction in modified ruthenium pastes during their burn-in process.
ruthenium dioxide were used as a current conducting phase, and lead-cadmium alumoborosilicate glass of the S-2 trade mark served as a CB.8 The ruthenium CCP and CB were the products obtained simultaneously as one batch; i.e., the specific surface area and granulometric composition of the pastes of all series were the same. The CCP to CB ratio in the inorganic compositions (IC) of the unmodified pastes was maintained constant: 35 : 65 (basis A) and 29 : 71 (basis B) for the samples based on lead ruthenate Pb 2 Ru 2 O 6 and ruthenium dioxide RuO 2 , respectively. The modifiers were introduced to replace the ruthenium compounds in the CCP in the amounts up to 10 wt.% (Table 1), except for the pastes of series 3 in which Nb2O5 was introduced into the charge in amounts of 0.5, 1.0, 3.0, and 5.0 wt.%. Owing to this, in the samples of this series the CCP : CB ratio changed with an increase in the niobium(V) oxide content and was equal to 34.5 : 65.5, 34 : 66, 32 : 68, 30 : 70, and 25 : 75. The data on the density (d), coefficient of linear thermal expansion (CLTE), and resistivity (ρ) of the initial inorganic components of the resistive pastes of which the first eight compo
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