Compact and Efficient HFCVD for Electronic Grade Diamond and Related Materials
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1203-J17-25
Compact and Efficient HFCVD for Electronic Grade Diamonds and Related Materials R. D. Vispute*, Andrew Seiser, Geun Lee, Jaurette Dozier, J. Feldman, L. Robinson, B. Zayac, and A. Grobicki. Blue Wave Semiconductors, Inc. 1450 S. Rolling Rd, UMBC Tech Center, Baltimore MD 21227 *contact: [email protected] ABSTRACT A compact and efficient hot filament chemical vapor deposition system has been designed for growing electronicgrade diamond and related materials. We report here the effect of substrate rotation on quality and uniformity of HFCVD diamond films on 2” wafers, using two to three filaments with power ranging from 500 to 600 Watt. Diamond films have been characterized using x-ray diffraction, Raman Spectroscopy, scanning electron microscopy and atomic force microscopy. Our results indicate that substrate rotation not only yields uniform films across the wafer, but crystallites grow larger than without sample rotation. Well-faceted microcrystals are observed for wafers rotated at 10 rpm. We also find that the Raman spectrum taken from various locations indicate no compositional variation in the diamond film and no significant Raman shift associated with intrinsic stresses. Results are discussed in the context of growth uniformity of diamond film to improve deposition efficiency for wafer-based electronic applications. INTRODUCTION Diamond films are attractive for electronic, optical, and mechanical applications because of their excellent hardness, strength, chemical and thermal stability, thermal conductivity, breakdown voltage, hole and electron mobility, radiation hardness, and optical transmission [1-3]. Enormous efforts have been made in studying diamond thin film growth by several chemical vapor deposition techniques including plasma assisted CVD (microwave, RF, DC), hot filament, electron and laser assisted, and ion beam assisted [4-13]. Large area and uniform diamond films are required for wafer-based semiconductor device applications including Microelectromechanical (MEMS) devices. Among many chemical vapor deposition techniques, HFCVD is the simplest and most versatile technique for growing diamond films on various substrates over a large area. Owing to its low capital cost and the ease of scalability, HFCVD has been considered as a very useful technique for producing low cost diamond films for industrial applications. In order to exploit HFCVD diamond for wafer-based electronics applications such as cold cathode field emitters, high thermal conductivity substrate materials for white LEDs, and high power Schottky diodes, diamond deposited substrate areas need to be scaled up without loss of uniformity or film quality. The main motivation of the present study is to identify the effects of various processing parameters on growth of diamond films on a rotating substrate or wafer to achieve uniform diamond films over large area substrates while minimizing thermal and power requirements for efficient reactor operation. In this context, we have developed a commercial HFCVD reactor in which the s
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