Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence
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Compositional variation of AlGaN epitaxial lms on 6H-SiC substrates determined by cathodoluminescence. A. Petersson, Anders Gustafsson, L. Samuelson, Satoru Tanaka and Yoshinobu Aoyagi MRS Internet Journal of Nitride Semiconductor Research / Volume 7 / January 2002 DOI: 10.1557/S1092578300000314, Published online: 13 June 2014
Link to this article: http://journals.cambridge.org/abstract_S1092578300000314 How to cite this article: A. Petersson, Anders Gustafsson, L. Samuelson, Satoru Tanaka and Yoshinobu Aoyagi (2002). Compositional variation of AlGaN epitaxial lms on 6H-SiC substrates determined by cathodoluminescence. . MRS Internet Journal of Nitride Semiconductor Research, 7, pp e5 doi:10.1557/S1092578300000314 Request Permissions : Click here
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MRS
Internet Journal Nitride Semiconductor Research
Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence. A. Petersson14, Anders Gustafsson 1, L. Samuelson1, Satoru Tanaka 2 and Yoshinobu Aoyagi3 1Division
of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden, Institute for Electronic Science, Hokkaido University, Kita, 12-Nishi 6, Kita-ku, Sapporo 060-0812
2Research
Japan, 3The Institute of Physical and Chemical Research (RIKEN), 4Crystal Fibre A/S, Blokken 84, DK-3460 Birkerød, Denmark, (Received Friday, May 3, 2002; accepted Thursday, June 27, 2002)
High quality epitaxial films of AlxGa1-xN, grown on SiC substrates, were investigated using spatially resolved cathodoluminescence (CL), scanning electron microscopy, and atomic force microscopy. A variation in the observed peak energy position of the CL was related to alloy fluctuations. CL was used to reveal relative alloy fluctuations of approximately 1% on a sub-micrometer scale, with a precision difficult to surpass with other available techniques. By correlating data from the different techniques, a model was derived. The main feature of it is an alloy fluctuation on the micrometer scale, seeded during the initial growth and extending through the epitaxial film. These alloy fluctuations seems to be related to terrace steps (≈5 nm in height), formed preferentially at scratches on the SiC surface. This investigation indicates that the initial growth of epitaxial films is critical and structures formed at the beginning of the growth tend to persist throughout the growth. Further, a strain gradient from the SiC interface extending towards the surface, was observed.
1
Introduction
III-V nitrides, and especially the ternary compounds of AlGaN, are technologically important for the fabrication of light emitting diodes and laser diodes emitting light in the blue and UV region [1]. These compounds are also important for the development and fabrication of high power and high frequency devices [2]
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