Download Device Characteristics of E-mode GaN HEMTs with a Second Gate Connected to the Source

Queue processing for download document No title

You can start your download in 30 seconds

Recommend Documents
Short gate length AlGaN/GaN HEMTs

176 78 770KB

Recessed Gate Processing for GaN/AlGaN-HEMTs

189 61 243KB

AlGaN/GaN HEMTs with 2DHG Back Gate Control

187 52 1MB

GaN-on-Si HEMTs: From Device Technology to Product Insertion

153 12 558KB

Ion-Implanted GaN/AlGaN/GaN HEMTs with Extremely Low Gate Leakage Current

179 46 198KB

Low-Frequency Noise Characterization in AlGaN/GaN HEMTs with Varying Gate Recess Depths

162 84 2MB

Emission Characteristics of GaN-Based EL Device with AC Operation

152 111 42KB

A Gate Breakdown Mechanism in Mesfets and HEMTs

182 54 283KB

Recent Progress on GaN HEMTs

209 4 4MB

A Linear OTA Using Series-Connected Source-Degenerated Bulk-Driven Floating Gate Differential Pairs

148 0 37MB

Fabrication and device characteristics of bulk GaN-based Schottky diodes

191 1 164KB

Material and Device Issues of AlGaN/GaN HEMTs on Silicon Substrates

146 42 497KB