Diameter Dependent Current-Voltage Characteristics of InSb Nanowires
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Diameter Dependent Current-Voltage Characteristics of InSb Nanowires Miroslav Penchev1, Jiebin Zhong2, Jian Lin2, Cengiz S. Ozkan2 and Mihrimah Ozkan1 1 Department of Electrical Engineering, University of California, Riverside, CA, United States 2 Department of Mechanical Engineering, University of California, Riverside, CA, United States ABSTRACT Single crystalline Indium Antimonide (InSb) nanowires were synthesized by chemical vapor deposition (CVD) technique, using gold (Au) nanoparticles as catalyst, via a vapor liquid solid mechanism. Structural properties of the as-grown InSb nanowires were investigated by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Nanowire field effect transistors (NWFETs) were fabricated in back-gate configuration, on Si/SO2 substrates, using SiO2 as gate insulator. The diameter of InSb nanowires used in the fabricated devices varied from 15-80 nm. Current-voltage measurements were conducted to determine the dependence of NWFETs parameters on the InSb nanowire diameter. Carrier mobility was shown to decrease with decrease of nanowire diameter. Temperature dependent current-voltage measurements were conducted to determine the effect of operating temperature on the InSb NWFET device performance. INTRODUCTION Semiconductor nanowires have received a great amount of attention in recent years and have become a subject of extensive research. Nanowires have demonstrated potential for applications in nanoelectronic circuits such as transistors, memory, and interconnects.[1, 2] Furthermore, quasi-one dimensional nanowires possess unique physical, optical, and electrical properties, which open up new possibilities for applications and devices based on quantum confinement of charge carriers.[3, 4] Indium Antimonide nanowires fall in the category of promising candidates for future nanoelectronic applications. InSb has a very small electron effective mass (0.014 m0) leading to very large electron mobility, this feature has been used to produce ultra fast-speed, low-power transistors.[5] In addition the small electron effective mass provides strong quantum confinement effects InSb nanostructures.[6] Electrical properties of InSb nanowire field effect transistors have been investigated [7-9], and temperature dependant electrical characterization of top-gated InSb NWFETs have been recently reported[10]. However, to best our knowledge, there has not been an experimental study on the nanowire diameter effect on the InSb NWFET performance. In this paper we report the effect of InSb nanowire diameter on the electron mobility. EXPERIMENTAL InSb nanowires (NWs) are grown on InSb (100) substrates, inside a horizontal vacuum tube furnace. InSb powder (99.999%) is used as a precursor during the growth process. Argon (Ar) and Hydrogen (H2) gases are used as the carrier gases. First, the native oxide on the InSb substrate is removed by chemical etching in hydrochloric acid (HCl) diluted in DI water (1:10 solution) and dried by Ar gas. Solutions of 20 nm Au colloids are diluted with I
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