Fast anodization fabrication of AAO and barrier perforation process on ITO glass
- PDF / 981,076 Bytes
- 8 Pages / 595 x 794 pts Page_size
- 105 Downloads / 217 Views
NANO EXPRESS
Open Access
Fast anodization fabrication of AAO and barrier perforation process on ITO glass Sida Liu1 , Zuzhou Xiong1 , Changqing Zhu1 , Ma Li2 , Maojun Zheng1* and Wenzhong Shen1
Abstract Thin films of porous anodic aluminum oxide (AAO) on tin-doped indium oxide (ITO) substrates were fabricated through evaporation of a 1,000- to 2,000-nm-thick Al, followed by anodization with different durations, electrolytes, and pore widening. A faster method to obtain AAO on ITO substrates has been developed, which with 2.5 vol.% phosphoric acid at a voltage of 195 V at 269 K. It was found that the height of AAO films increased initially and then decreased with the increase of the anodizing time. Especially, the barrier layers can be removed by extending the anodizing duration, which is very useful for obtaining perforation AAO and will broaden the application of AAO on ITO substrates. Keywords: Fast anodization; AAO; Barrier layer; ITO glass
Background Nanostructures with monodisperse arrangement nanopores have been used widely as template to fabricate various functional nanomaterials [1-4]. One of such nanostructures is well-known porous anodic aluminum oxide (AAO), which is considered as one of the most prominent template owing to its advantages of controllable diameter, high aspect ratio, and economical way in producing [1,5-7]. To this day, a variety of synthetic methods have been developed to fabricate porous AAO, typically fabricated from anodizing bulk aluminum foils or plates at constant voltage or current density in various electrolytes such as sulfuric redacid, oxalic acid, phosphoric acid, etc [8-11]. However, it needs great care in the process of preparation of the aluminum substrate and the manipulation of the anodic film since the AAO is a brittle ceramic film grown on soft aluminum metal [12]. Thus, direct fabricating AAO onto rigid substrates become a more convenient and important technique to prepare vertical nanostructures. The fabrication of AAO on Si substrates has been well established [12-17], while many photonic applications call for nanowire structures on transparent conductive substrates. The tin-doped indium
*Correspondence: [email protected] 1 Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, 800 DongChuan Road, 200240 Shanghai, China Full list of author information is available at the end of the article
oxide (ITO) glass is a good choice to satisfy this demand [18-20]. Recently, several articles have reported the fabrication and application of AAO in phosphoric acid [21-23]. Chu et al. [23] reported the successful fabrication of AAO is in phosphoric acid, from 2-μm thick aluminum films deposited by radio frequency (rf ) sputtering, resulting in large-diameter AAO pores. An anodization duration of more than 40 min was observed in 10 vol.% phosphoric acid at a voltage of 130 V at 280 K. Small transverse holes appear regularly in the anodized films, which arose from the fact that
Data Loading...
