Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations
In this volume, Prof. Zhang reviews the systematic theoretical studies in his group on the growth mechanisms and properties of silicon quantum dots, nanotubes and nanowires, including: mechanisms of oxide-assisted growth of silicon nanowires, energetic st
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Rui-Qin Zhang
Growth Mechanisms and Novel Properties of Silicon Nanostructures from QuantumMechanical Calculations
SpringerBriefs in Molecular Science
For further volumes: http://www.springer.com/series/8898
Rui-Qin Zhang
Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations
123
Rui-Qin Zhang Department of Physics and Materials Science City University of Hong Kong Hong Kong SAR People’s Republic of China
ISSN 2191-5407 ISBN 978-3-642-40904-2 DOI 10.1007/978-3-642-40905-9
ISSN 2191-5415 (electronic) ISBN 978-3-642-40905-9 (eBook)
Springer Heidelberg New York Dordrecht London Library of Congress Control Number: 2013953595 The Author(s) 2014 This work is subject to copyright. All rights are reserved by the Publisher, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. Exempted from this legal reservation are brief excerpts in connection with reviews or scholarly analysis or material supplied specifically for the purpose of being entered and executed on a computer system, for exclusive use by the purchaser of the work. Duplication of this publication or parts thereof is permitted only under the provisions of the Copyright Law of the Publisher’s location, in its current version, and permission for use must always be obtained from Springer. Permissions for use may be obtained through RightsLink at the Copyright Clearance Center. Violations are liable to prosecution under the respective Copyright Law. The use of general descriptive names, registered names, trademarks, service marks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. While the advice and information in this book are believed to be true and accurate at the date of publication, neither the authors nor the editors nor the publisher can accept any legal responsibility for any errors or omissions that may be made. The publisher makes no warranty, express or implied, with respect to the material contained herein. Printed on acid-free paper Springer is part of Springer Science+Business Media (www.springer.com)
Foreword
The shrinkage of dimensions of nanomaterials is expected to reveal new fascinating properties which may ultimately lead to exciting applications in optoelectronic, nanoelectronic, environmental, energy, biological, and medical areas. Different aspects of nanoscience and nanotechnology (nanomaterials structure, growth mechanisms, and properties) can now be studied by modern computational methods, thereby providing new insights at the atomic level which are otherwise unavailable or difficult to obtain. In this Sp
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