High voltage-controlled magnetic anisotropy and interface magnetoelectric effect in sputtered multilayers annealed at hi
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ly 2020 Vol. 63 No. 7: 277512 https://doi.org/10.1007/s11433-019-1524-y
High voltage-controlled magnetic anisotropy and interface magnetoelectric effect in sputtered multilayers annealed at high temperatures 1,2,3†
3,5†*
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3
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LeZhi Wang , Xiang Li , Taisuke Sasaki , Kin Wong , GuoQiang Yu , ShouZhong Peng , 7 6 6 4 3* Chao Zhao , Tadakatsu Ohkubo , Kazuhiro Hono , WeiSheng Zhao , and KangLong Wang 1
Beijing Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing 100191, China; 2 School of Computer Science & Engineering, Beihang University, Beijing 100191, China; 3 Department of Electrical Engineering, University of California, Los Angeles, Los Angeles 90095, USA; 4 School of Microelectronics, Beihang University, Beijing 100191, China; 5 Inston, Inc., Los Angeles 90095, USA; 6 National Institute for Materials Science (NIMS), Tsukuba 305-0047, Japan; 7 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China Received December 5, 2019; accepted February 10, 2020; published online May 7, 2020
Voltage control of magnetism promises great energy efficiency in writing magnetic memory. Here, using Cr/Mo/CoFeB/MgO multilayers stable under high annealing temperatures up to 590°C, we significantly enhance the interfacial crystallinity, thereby the interface-originated perpendicular magnetic anisotropy (PMA), voltage-controlled magnetic anisotropy (VCMA), and in2 terface magnetoelectric (ME) effect. High interfacial PMA of 1.35 mJ/m , VCMA coefficient of −138 fJ/(V m), and interface ME coefficient, which is 2-3 orders of magnitude larger than ab initio calculation results are simultaneously achieved after annealing at 500°C. These promising results enabled by the industry-applicable sputtering process will pave the way for highdensity voltage-controlled spintronic devices. voltage-controlled magnetic anisotropy (VCMA), magnetoelectric (ME) effect, perpendicular magnetic anisotropy PACS number(s): 85.75.Dd, 85.75.-d, 85.80.Jm, 71.70.Ej, 75.75.+a Citation:
L. Z. Wang, X. Li, T. Sasaki, K. Wong, G. Q. Yu, S. Z. Peng, C. Zhao, T. Ohkubo, K. Hono, W. S. Zhao, and K. L. Wang, High voltage-controlled magnetic anisotropy and interface magnetoelectric effect in sputtered multilayers annealed at high temperatures, Sci. China-Phys. Mech. Astron. 63, 277512 (2020), https://doi.org/10.1007/s11433-019-1524-y
1 Introduction CoFeB/MgO/CoFeB-based perpendicular magnetic tunnel junction (pMTJ) has attracted great interest for use in magnetic random-access memory (MRAM) [1]. Current-induced magnetic fields or spin-transfer torque (STT) are con*Corresponding authors (Xiang Li, email: [email protected]; KangLong Wang, email: [email protected]) †These authors contributed equally to this work.
ventionally used for the writing process [2], the latter enabling switching energy in pMTJ devices down to the sub-pJ/ bit regime [3]. However, these write energy values are still a few orders of magnitude larger than those of static randomaccess memory (SRAM) transistors (~fJ) [4], which mai
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