II-VI Material Integration With Silicon for Detector and PV Applications
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II-VI Material Integration With Silicon for Detector and PV Applications T.A. Gessert, E. Colegrove, B. Stafford, R. Kodama, Wei Gao, H.R. Moutinho, D. Kuciauskas, R.C. Reedy, T.M. Barnes and S. Sivananthan MRS Advances / FirstView Article / July 2016, pp 1 - 12 DOI: 10.1557/adv.2016.408, Published online: 06 June 2016
Link to this article: http://journals.cambridge.org/abstract_S2059852116004084 How to cite this article: T.A. Gessert, E. Colegrove, B. Stafford, R. Kodama, Wei Gao, H.R. Moutinho, D. Kuciauskas, R.C. Reedy, T.M. Barnes and S. Sivananthan II-VI Material Integration With Silicon for Detector and PV Applications. MRS Advances, Available on CJO 2016 doi:10.1557/adv.2016.408 Request Permissions : Click here
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MRS Advances © 2016 Materials Research Society DOI: 10.1557/adv.2016.408
II-VI Material Integration With Silicon for Detector and PV Applications T.A. Gessert†, E. Colegrove*, B. Stafford*, R. Kodama†, Wei Gao*, H.R. Moutinho**, D. Kuciauskas**, R.C. Reedy**, T.M. Barnes**, and S. Sivananthan* †EPIR Inc. Bolingbrook, IL 60440 *University of Illinois at Chicago, Physics Department, Chicago, IL 60612 **National Renewable Energy Laboratory, Golden, CO 80401 ABSTRACT Heteroepitaxial growth of high-quality II-VI-alloy materials on Si substrates is a wellestablished commercial growth process for infrared (IR) detector devices. However, it has only recently been recognized that these same processes may have important applications for production of high-efficiency photovoltaic devices. This submission reviews the process developments that have enabled effective heteroepitaxy of II-VI alloy materials on latticemismatched Si for IR detectors as a foundation to describe recent efforts to apply these insights to the fabrication of multijunction Si/CdZnTe devices with ultimate conversion efficiencies >40%. Reviewed photovoltaic studies include multijunction Si/CdZnTe devices with conversion efficiency of ~17%, analysis of structural and optoelectrical quality of undoped CdTe epilayer films on Si, and the effect that a Te-rich growth environment has on the structural and optoelectronic quality of both undoped and As-doped heteroepitaxial CdTe. INTRODUCTION Large-area, low-cost, high-quality, II-VI semiconductor materials are needed for the next generation of IR-detector and solar-photovoltaic (PV) systems. Many present state-of-the-art infrared focal plane arrays (IRFPAs) are fabricated using molecular-beam epitaxy (MBE) of HgCdTe (MCT) absorbers onto CdZnTe (CZT) substrates. CZT is a logical substrate choice because Cd0.94Zn0.06Te can be lattice matched to the Hg0.80Cd0.20Te alloy used for longwavelength IR (LWIR) detectors, while slight variations in Zn content can accommodate absorber materials for mid-wavelength and short-wavelength IR detectors (MWIR and SWIR, respectively). Unfortunately, there
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