Influence of Rapid Thermal Annealing on Shallow BF 2 Implantation into Pre-Amorphized Silicon
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INFLUENCE OF RAPID THERMAL ANNEALING ON SHALLOW BF PRE-AMORPHIZED SILICON
2
IMPLANTATION INTO
W. MASZARA, C. CARTER, D. K. SADANA, J. LIU, V. OZGUZ, J. WORTMAN AND G. A. ROZGONYI North Carolina State University, Raleigh, NC 27650 and Microelectronic Center of North Carolina, Research Triangle Park, NC
ABSTRACT Low energy, shallow BF 2 + implants were carried out at room or liquid nitrogen temperature into deep pre-amorphized (100) Si for better control of the dopant profile and post-annealing structural defects. Cross sectional and angle polished plan view transmission electron microscopy were used to study the structural quality of the implanted layer, while SIMS provided a chemical profile. Four types of structural defects were observed in BF 2 + implanted, pre-amorphized samples following rapid thermal annealing with a halogen lamp. An in-situ ion beam annealing and the presence of F in the Si lattice were related to the creation of the defects. Good correlations between F gettering and TEM observed defects were found to exist. Implantation of B+ into a pre-amorphized Si surface and subsequent rapid thermal annealing was found to produce a wide defect-free surface layer.
INTRODUCTION The increase in component density of current large scale integrated silicon devices and the accompanying shrinkage of physical dimensions of individual components requires very shallow junctions (
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