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INFLUENCE OF TEMPERATURE AND ELECTRON ENERGY ON SOLID-PHASE EPITAXY OF IMPLANTED Si INDUCED AT LOW TEMPERATURE BY ELECTRON IRRADIATION IN THE ELECTRON MICROSCOPE G.LULLI*, P.G.MERLI*, A.GARULLI*, AND M.VITTORI ANTISARI** * CNR-Istituto LAMEL, Via Castagnoli 1, 40126 Bologna, ITALY ** ENEA, Divisione Scienza dei Materiali, CRE Casaccia, CP 2400, 00100 Roma, ITALY

ABSTRACT Electron beam induced solid-phase epitaxy has been obtained on cross sections of implanted Si layers, by in-situ irradiation in the electron microscope, with electrons of energies of 200 and 300 keV, in the temperature range -170

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