Kinetic analysis and correlation with residual stress of the Ni/Si system in thin film
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Kinetic analysis and correlation with residual stress of the Ni/Si system in thin film F.CACHO1,2, D.AIME2,3, F.WACQUANT2, B.FROMENT2, C.RIVERO5, P.GERGAUD5, O.THOMAS5, G.CAILLETAUD1, H.JAOUEN2, S.MINORET4, A.SOUIFI3 1
Centre des Matériaux P.M. FOURT, Ecole des Mines de Paris, B.P. 87, 91003 Evry, France 2 STMicroelectronics, 850 rue Jean Monet, 38921 Crolles, France 3 Laboratoire de Physique de la Matière (LPM), INSA Lyon, 69621 Villeurbanne, France 4 CEA-LETI, 17 rue des Martyrs, 38100 Grenoble, France 5 TECSEN, UMR CNRS 6122, Univ. Aix-Marseille III, F-13397 Marseille Cedex 20, France [email protected]
ABSTRACT Reactive diffusion of the Ni/Si system has been studied by annealing nickel thin film on (100) silicon crystal. The measurement of the NiSi sheet resistance as a function of the annealing temperature and the type of annealing (Rapid Thermal Annealing and spike one) has been investigated. A kinetic model based on multiphase diffusion has been developed that fits experimental sheet resistance data. Residual stress in the thin film, measured by a curvature measurement technique, is correlated with the nature of the phases in the film. Finally the viscoplastic mechanical behavior of the Ni2Si and NiSi phases is analyzed in the case of low and fast thermal ramps.
INTRODUCTION In microelectronics industry, device performance improvement is due to scale shrinking. According to the International Technology Roadmap Semiconductor, the 65nm node will be released in 2005 and the reduction of contact resistivity in integrated circuit is an important challenge. Silicide thin films have great advantages for the reduction of series resistance in gates and local interconnects of heavily doped contacts1, but also in Schottky diode for bipolar transistor2. In advanced CMOS technology several silicide were used. TiSi2 was commonly used in the past last 20 years, but the low resistivity phase nucleation C54 is limited and for line width less than 0.1µm, the reaction is uncompleted. CoSi2 silicide gives better sheet resistance performance when scaling down dimension; it has therefore replaced TiSi2 for many applications. Nevertheless, NiSi silicide seems to be the best candidate for replacing CoSi2 beyond the 65nm node. There are many advantages in its uses: •
Low consumption of silicon during the formation that avoid spiking of shallow junction
•
Low formation temperature for the low resistive NiSi phase (
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