Laser synthesis of 2D structures for photo-thermo sensors with high sensitivity
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Laser synthesis of 2D structures for photo‑thermo sensors with high sensitivity N. Stefan1 · S. A. Mulenko2 · M. A. Skoryk2 · V. M. Popov3 · O. Yo. Gudymenko4 Received: 10 April 2020 / Accepted: 17 September 2020 © Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract Semiconductors are considered as promising materials for the fabrication of photo-thermo sensors with high sensitivity. Therefore, here we propose to synthesize of amorphous 2D single-layered structures with high thermo-photosensitivity by using photons generated by a KrF* laser radiation (λ = 248 nm, τFWHM ≤ 25 ns) in the reaction of copper (Cu) atoms with methane (CH4) molecules by reactive pulsed laser deposition (RPLD) process. Optimum conditions were found out to synthesize of these structures with the thickness of (56–160) nm. X-ray diffraction analysis evidenced either amorphous or polycrystalline structures on the deposits. Element analysis was carried out by energy-dispersive X-ray spectroscopy (EDXS). The semiconductor temperature trend was detected with the variable energy band gap (Eg) in the range of (0.17–1.0) eV depending on substrate temperature, C H4 pressure and structures’ thickness. The highest photosensitivity of these structures was high as 640 V/W at white light power density ~ 6 × 10–3 W/cm2 and the highest thermo-sensitivity (Seebeck coefficient) was high as 10.5 mV/K. An interpretation is provided for thermo-photosensitivity behaviour. The amorphous 2D single-layered structures were synthesized by laser radiation for the first time with such superior thermo-photo properties. Therefore, such structures are exceptional candidates for a new generation of effective thermo-photo sensors operating at moderate temperatures.
1 Introduction
* S. A. Mulenko [email protected] N. Stefan [email protected] M. A. Skoryk [email protected] V. M. Popov [email protected] O. Yo. Gudymenko [email protected] 1
National Institute for Lasers, Plasma and Radiation Physics, PO Box MG‑54, 77125 Magurele, Romania
2
G. V. Kurdyumov Institute for Metal Physics NAS of Ukraine, 36, Academician Vernadsky Blvd., Kyiv 03142, Ukraine
3
State Enterprise “Research Institute of Microdevices” STC “Istitute for Single Crystals”, NAS of Ukraine, 3, Severo‑Syretska, Kyiv 04136, Ukraine
4
V. F. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, Prospect Nauki, Kyiv 03028, Ukraine
A great interest is nowadays focused on 2D structures to test the advantages of thin films on the performances of electronic devices and sensors [1]. As it was shown, thin films (2D structures) based on transition metals silicides and oxides synthesized by pulsed laser deposition (PLD), reactive pulsed laser deposition (RPLD), and laser chemical vapour deposition (LCVD) can be considered a challenging opportunity for new thermo-tenso-photo-chemical sensors [2–8]. The silicides and oxides demonstrated semiconductor properties characterised with an energy band gap (Eg) less than 1.0 eV. RPLD was first applied for the synthesis
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