Mask-free three-dimensional epitaxial growth of III-nitrides
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Mask-free three-dimensional epitaxial growth of IIInitrides Mariusz Rudzin´ski1,* , Sebastian Zlotnik1,4, Marek Wo´jcik1, Jarosław Gaca1, Łukasz Janicki2, and Robert Kudrawiec2,3 1
Łukasiewicz Research Network - Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wybrze_z e Wyspian´skiego 27, 50-370 Wrocław, Poland 3 Łukasiewicz Research Network - PORT Polish Center for Technology Development, Stablowicka 147, 54-066 Wrocław, Poland 4 Present address: Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland 2
Received: 29 May 2020
ABSTRACT
Accepted: 29 August 2020
A novel catalyst-free and maskless growth approach is presented to form an ordered geometrical array of three-dimensional (3D) AlGaN/AlN microrods. The growth method is composed of a single growth step using metalorganic vapor phase epitaxy, achieving microstructures with homogeneous diameters, shapes and sizes over relatively large scale (on 2-in. wafer). The 3D AlGaN/AlN heterostructures are grown in a form of micro-sized columns elongated in one direction perpendicular to the substrate surface and with a hexagonal cross section. A careful examination of growth steps revealed that this technology allows to suppress coalescence and lateral overgrowth, promoting vertical 3D growth. Interestingly, two distinct morphologies can be obtained: honeycomblike hexagonal arrangement perfectly packed and with twisted microrods layout, by controlling strain state in AlN buffer layers. Consequently, 3D AlGaN microrods on tensile-strained AlN templates show a 0° twisted morphology, while on compressive-strained templated a 30° twisted arrangement. Moreover, the optical and crystalline quality studies revealed that the top AlGaN layers of the examined 3D semiconductor structures are characterized by a low native point-defect concentration. These 3D AlGaN platforms can be applied for light emitting devices or sensing applications.
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The Author(s) 2020
Handling Editor: Kevin Jones. Mariusz Rudzin´ski and Sebastian Zlotnik have contributed equally to this work.
Address correspondence to E-mail: [email protected]
https://doi.org/10.1007/s10853-020-05187-0
J Mater Sci
GRAPHIC ABSTRACT
Introduction The development of three-dimensional (3D) semiconductor structures with distinct architectures opens new routes for device design with novel features, becoming valuable technology for certain specialized purposes and alternative for conventional planar structures. In principle, 3D structures offer high surface-to-volume ratios, semi- and nonpolar surfaces and high crystalline quality [1]. The semiconductor system of III-nitrides is one of the most versatile group of binary compounds, e.g., AlN, GaN and InN, and their ternary and quaternary alloys, with attractive physical, optical and electronic properties [2–4]. In general, III-nitride
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