Micro-Raman and FTIR Analysis of Silicon Carbo-Nitride Thin Films at Different H2 Flow Rate
Silicon carbo-nitride thin films were deposited on Si (100) substrate by thermal chemical vapour deposition using C2H2 and Si powder precursors. The thin films were characterized by scanning electron microscope (SEM), Fourier transform infrared spectrosco
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Abstract Silicon carbo-nitride thin films were deposited on Si (100) substrate by thermal chemical vapour deposition using C2H2 and Si powder precursors. The thin films were characterized by scanning electron microscope (SEM), Fourier transform infrared spectroscopy and Raman spectroscopy. The FTIR spectra reveals the presence of vibration signature of various bonds at 512, 1135, 1688, 2444, 3032, 3550 cm−1 which correspond to Si–N, SiC–N, C–N, Si–H, C–H and N–H, respectively, in the SiCN thin films. Raman spectra reveal the presence of three prominent stoke shifts at 617, 1141 and 1648 cm−1 corresponding to Si–H, SiC–N and C–C respectively. The vibrational signature of SiC–N shifted from 1126 to 1050 cm−1 with increase in H2 flow rate indicates formation of nanosized cluster in deposited thin film. Keywords Thermal CVD
SiCN Raman FTIR
D. Kumar (&) U. Rizal S. Das B.P. Swain Department of Mechanical Engineering, Sikkim Manipal Institute of Technology, Majitar, Sikkim, India e-mail: [email protected] S. Das e-mail: [email protected] B.P. Swain e-mail: [email protected] D. Kumar S. Das Centre for Material Science and Nano Technology, Sikkim Manipal Institute of Technology, Majitar, Sikkim, India B.S. Swain Advanced Material Processing, Kookmin University, Seoul, Republic of Korea © Springer Nature Singapore Pte Ltd. 2018 A. Kalam et al. (eds.), Advances in Electronics, Communication and Computing, Lecture Notes in Electrical Engineering 443, https://doi.org/10.1007/978-981-10-4765-7_9
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1 Introduction The silicon carbo-nitride (SiCxNy) films have caught the attention of researchers across the world due its excellent physical, chemical and mechanical properties making it a promising material to be used for number of operations like thermal protective coatings, wear resistive coating, production of electronic devices, high-temperature semiconductors, electromechanical sensors for harsh environments, anode materials for lithium-ion batteries. [1–6]. Moreover, its optical band gap tunes between 1.1 and 5.5 eV concerning carbon and nitrogen alloying. Therefore, the selecting application mainly depends on chemical network of distributed sp2 and sp3 bonds carbon atoms and surrounding nitrogen and silicon in the SiCN. To great extent the quality of thin film depends on the deposition techniques, CVD is one of the most popular methods to prepare silicon carbonitride films in which the deposition conditions determine the phase and chemical composition of the films. [7]. Raman spectroscopy is used for structural analysis of crystalline and amorphous films. Raman analysis has shown that Si–N, Si–Si, Si–H, Si–C–N bonds were found in the films. Hydrogen is diatomic light gas which can diffuse through any material during the synthesis process, so H2 dilution plays an important role in transformation from amorphous to microcrystalline and polycrystalline silicon carbonitride as it prevents polymerization reactions. The effects of hydrogen dilution have been also studied and reported [8]
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