Multiple negative differential resistance in perovskite (CH 3 NH 3 PbI 3 ) decorated electrospun TiO 2 nanofibers
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Multiple negative differential resistance in perovskite (CH3NH3PbI3) decorated electrospun TiO2 nanofibers Edita Joseph1 · Sreejith P. Madhusudanan2 · Kallol Mohanta3 · M. Karthega1 · Sudip K. Batabyal2 Received: 21 February 2020 / Accepted: 3 August 2020 © Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract Polyvinyl alcohol and titanium dioxide nanofibers have been synthesized through the electrospinning method. CH3NH3PbI3 microcrystals were deposited over T iO2 nanofiber through a chemical bath deposition method. In this report, we have discussed the electrical properties of the CH3NH3PbI3 decorated TiO2 nanofibers. Multiple negative differential resistance (multiple peaks) was observed in perovskite (CH3NH3PbI3) decorated polyvinyl alcohol-titanium dioxide composites nanofibers when 2 V bias was applied. Polyvinyl alcohol-titanium dioxide composite nanofibers have been characterized by scanning electron microscope, fourier transform infrared spectra and X-ray diffraction. “Write–read–erase–read” sequence of the electrical response of the composites was probed to determine the memory applications. Electrochemical impedance spectroscopy (EIS) was investigated to determine the charge confinement in the perovskite decorated nanofiber in the highand low-conducting states. Keywords Electrospinning · TiO2 nanofibers · Perovskite/methylammonium lead iodide (CH3NH3PbI3) · Memristor · Negative differential resistance (NDR)
1 Introduction In recent years, the usage of the semiconducting device as a memristor for storage purpose has seen huge growth. Because of their low power consumption, non-volatile nature and simple device structures, memristors are considered to be one of the most promising devices for advanced electronic Electronic supplementary material The online version of this article (https://doi.org/10.1007/s00339-020-03877-9) contains supplementary material, which is available to authorized users. * Kallol Mohanta [email protected]; [email protected] * Sudip K. Batabyal [email protected]; [email protected] 1
Department of Physics, Amrita School of Engineering, Amrita Vishwa Vidyapeetham, Coimbatore 641112, Tamil Nadu, India
2
Amrita Center for Industrial Research and Innovation (ACIRI), Amrita School of Engineering, Amrita Vishwa Vidyapeetham, Coimbatore 641112, Tamil Nadu, India
3
Nanotech Research Innovation and Incubation Centre (NRIIC), PSG Institute of Advanced Studies, Peelamedu, Avinashi Road, Coimbatore 641004, Tamil Nadu, India
applications. The memristor behaviour was first discovered by L. Chau in 1971 [1]. Although there are various kinds of memory devices, one of the most prominent memory devices is the random-access memory (RAM) which is based on resistive switching (RS) that is it can switch between high resistance state (HRS) and low resistance state (LRS). This process of switching between different resistive/ conductive states is termed as electrical bistability [2]. Resistive switching (RS) also plays a key role in memristive applicat
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