Novel Periodic Nanoporous Silicate Glass With High Structural Stability as Low-k Thin Film
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Novel periodic nanoporous silicate glass with high structural stability as low-k thin film Yoshiaki Oku1, Norikazu Nishiyama2, Shunsuke Tanaka2, Korekazu Ueyama2, Nobuhiro Hata3, and Takamaro Kikkawa3,4 1 MIRAI Project, Association of Super-Advanced Electronics Technology, AIST Tsukuba, Ibaraki 305-8568, JAPAN 2 Division of Chemical Engineering, Graduate School of Engineering Science, Osaka University, Osaka 560-8531, JAPAN 3 MIRAI Project, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology, AIST Tsukuba, Ibaraki 305-8568, JAPAN 4 Research Center for Nanodevices and Systems, Hiroshima University, Hiroshima 739-8527, JAPAN. ABSTRACT We have recently developed novel periodic nanoporous silicate glass with high structural stability as low-k thin film by spin-coating method. Periodic porous silicate glass films developed so far cause structural shrinkage (10~20% or more) by annealing the spin-coated films. In this investigation we adopt vapor-phase TEOS (tetraethoxysilane)-treatment before anneal. Our novel nanoporous film shows little shift of XRD peak position after annealed at 673K, indicating both the ultimate mechanical strength and the minimization of stress in the interface between the prepared film and the underlying substrate. Such a shrinkage-free periodic nanoporous silica film can possess higher VBD (break down voltage) and lower ILEAK (leakage current). In this article we estimate structural properties (including information on pores introduced intentionally) by XRD and TEM observation, and electrical properties (dielectric constant, VBD and ILEAK) by IV and CV measurement of this special-treated periodic nanoporous silica film. The dielectric constant of the thus prepared periodic porous silica film with silylation after calcination was evaluated to be around 1.8 at 100kHz. INTRODUCTION Reducing interconnect capacitance is increasingly a more important issue in order to fabricate high-speed ULSI beyond 100 nm technology node. To meet with this requirement, various intermetal dielectric films with low dielectric constant (low-k films) have been developed and estimated. To introduce pores (air) into dielectric material is so efficient a method to prepare low-k film with dielectric constant less than 2.0, because the dielectric constant of air is 1.0. The conventional pore-introduced films, however, have not enough mechanical strength and electrical properties as low-k film applied in the field of IC production. Therefore, technology in introduction of pores into dielectric film must be brushed up for development of low-k (k=1.5) in sub-50 nm technology node [1]. B12.6.1 Downloaded from https:/www.cambridge.org/core. Cornell University Library, on 15 May 2017 at 06:45:22, subject to the Cambridge Core terms of use, available at https:/www.cambridge.org/core/terms. https://doi.org/10.1557/PROC-716-B12.6
On the other hand, periodic mesoporous silica [2-6] has recently attracted much interest in the field of micro-electronics and micro-optics as well as in
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