Optical Properties of Al 0.70 Ga 0.30 As:Er,Yb
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OPTICAL PROPERTIES OF Al0.70Ga0.30As:Er,Yb Shin-ichiro Uekusa, Isao Tanaka and Tomoyuki.Arai Department of Electrical and Electronic Engineering, Meiji University, 1-1-1 Higashi-mita, Tama-ku, Kawasaki, Kanagawa, 214-8571, Japan ABSTRACT Erbium (Er) ions were co-implanted with ytterbium (Yb) into Al0.70Ga0.30As substrates and we realized an increase in the intensity of Er intra-4f-shell luminescence. The photoluminescence (PL) intensity of Er-related dominant peak (1538.2nm) was enhanced by co-implanted Yb. The thermal quenching was improved. PL intensity of Yb-related emission was decreased. We studied the transfer energy and the optical sensitization of Yb ions co-implanted with Er ions in Al0.70Ga0.30As.
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2 Energy transfers from 2F5/2 (the first excited state) F7/2 (the ground state) of Yb3+ to 4I13/2 (the 4 first excited state) I15/2 (the ground state) of Er3+ were observed by PL excitation (PLE) and selectively excited PL (SPL).
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INTRODUCTION Rare-earth (RE)-doped semiconductors are of great interest in view of the potential application to optoelectronic devices because of their sharp, temperature-stable emission originating from intra-4f-shell transition of the RE metal [1,2,3]. In particular, Erbium (Er)-doped semiconductors are a promising material for manufacturing optical devices emitting at 1.54µm, which coincides with the wavelength of minimum absorption in a silica-based optical fiber. For the Er-doped semiconductor, it is important to resolve problems such as poor luminescence intensity and rapid thermal quenching of the Er-related emission of energy transition from the host semiconductor to the intra-4f-shell of Er ions. So far, Er ions have been co-implanted with impurities (carbon, oxygen, nitrogen) into Al0.70Ga0.30As substrates [1.2.3], be which we realized an increase in the intensity of Er intra-4f-shell luminescence. Since energy gap between the second excited state and the ground state of Er is in similar between the first excited state and the ground state of Yb, co-implanted ytterbium (Yb) was also enhanced Er-related emission. In this work, we studied the transfer energy and the optical sensitization of Yb ions co-implanted with Er ions in Al0.70Ga0.30As.
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EXPERIMENTAL DETAILS The Er ion was implanted at an energy of 1MeV with a dose of 1 × 1013cm-2, and Yb at 1MeV with a dose 3 × 1012cm-2 at room temperature. Substrates used in this work were grown on an undoped (100) Al0.70Ga0.30As layer on GaAs by molecular beam epitaxy (MBE). After the ion implantation, these samples were thermally annealed at a temperature of 800 ºC for 10minutes by the face-to-face technique in hydrogen atmosphere. Photoluminescence (PL), selectively excited PL (SPL) and PL excitation (PLE) measurements were carried out using a 1m-focal-distance double-grating monochromator and a GaAs photomultiplier (Hamamatsu Photonics R5509-72). Samples were placed into a closed-cycle helium gas cryostat and held at temperatures ranging from 15K to 300K. PL was excited by the 488.0nm line of an Ar ion laser
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