Parameters for Feature Evolution Models in Plasma Etching from Molecular Dynamics Simulation
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Mat. Res. Soc. Symp. Proc. Vol. 389 01995 Materials Research Society
plasma, leading to Si+ impacting the surface with Ei on the order of a few tens to hundreds of eV. In our simulations, neutral energetic Si impacts a SiFx surface, with a range of Ei from 0. 1 to 50 eV. One or more events may occur when Si impacts a SiFx surface. These events include Si sticking to or reflection from the surface; reaction with surface Six-I Fy species to form a product that leaves the surface; and physical sputtering of a SixFy product that does not contain the incident Si. These events are illustrated schematically in Fig. 1.
DESCRIPTION OF SIMULATION We used classical molecular dynamics (MD) simulations incorporating the StillingerWeber interatomic potentials for the Si/F binary system. 3,4 We used the velocity Verlet integration scheme 5 with a variable time-step 6t depending on the maximum velocity of an atom (0.077 fs
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