Photoresist Free Negative and Positive Photolithographic Deposition of Zirconium Oxide Films from Photosensitive Metal O
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1002-N07-21
Photoresist Free Negative and Positive Photolithographic Deposition of Zirconium Oxide Films from Photosensitive Metal Organic Compounds Xin Zhang, and Ross H. Hill Department of Chemistry, Simon Fraser University, 8888 University Drive, Burnaby, BC, V5A 1S6, Canada
ABSTRACT Photoresist free photolithographic deposition of zirconium oxide from photosensitive zirconium complexes has been achieved using photochemical metal organic deposition. In this contribution, the deposition of patterned zirconium oxide is used as an example to demonstrate both negative and positive photolithographic deposition. In the prototypical deposition of zirconium oxide by photochemical metal organic deposition, a solution containing zirconium (IV) di-n-butoxide bis(2,4-pentanedionate) was used to spin coat a silicon substrate, resulting in an amorphous film. The film was then exposed to UV light leading to the formation of zirconium oxide and other volatile products. The resultant zirconium oxide film was investigated by X-ray diffraction and Auger Electron Spectroscopy. Irradiating the precursor film through a photo mask led to a latent image which yielded either a negative or a positive pattern dependent upon developer. Subject to further photochemical or thermal treatment, a zirconium oxide pattern can be obtained. Similar results were obtained using a series of zirconium (IV) complexes. Both positive and negative patterns of zirconium oxide with 2 micron feature sizes were obtained. INTRODUCTION In this paper, we demonstrate the direct deposition of zirconium oxide patterns from zirconium complexes by both negative and positive photolithography. Zirconium oxide is useful as a high dielectric constant material and as a component of ceramic materials in microelectronics [1,2]. We have reported the deposition of negative zirconium oxide patterns by photochemical metal organic deposition (PMOD) of zirconium (IV) 2-ethylhexanoate [3]. PMOD is a method of thin film deposition developed [3-7] in the early 1990ís. It is lithography compatible, and therefore, metal/oxide patterns can be directly deposited by this method. The process is illustrated in Figure 1. First, a film of photosensitive metal organic complex(es) is deposited on a substrate, usually by spin coating. The film is then exposed with visible or ultraviolet light through a photo mask. The irradiation results in the reaction of the metal complex in the exposed area only. After exposure, the film is treated with a developer to remove the film from either the unexposed or the exposed regions, forming either a negative or a positive pattern. Depending on the process, the pattern can be used as formed or subjected to treatment such as further exposure, annealing or subjected to a reactive environment, leading to the formation of the desired metal/oxide. PMOD has several advantages over the traditional method for patterning metal or metal oxide layers. The first is that the initial blanket film of the desired material is not required. The second is that there is only a s
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