Plasma-Chemical Synthesis of Lead Sulphide Thin Films for Near-IR Photodetectors
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Plasma‑Chemical Synthesis of Lead Sulphide Thin Films for Near‑IR Photodetectors Leonid Mochalov1,2 · Alexander Logunov1 · Igor Prokhorov1 · Tatyana Sazanova1 · Aleksey Kudrin3 · Pavel Yunin3 · Sergey Zelentsov3 · Aleksey Letnianchik3 · Nikolay Starostin3 · Glenn Boreman2 · Vladimir Vorotyntsev1 Received: 1 May 2020 / Accepted: 19 August 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract Lead sulfide (PbS) thin films of different morphology were synthesized via direct interaction of lead and sulfur vapors. Low temperature nonequilibrium RF (40.68 MHz) plasma discharge at low pressure ((3–5) × 10–3 Torr) was used for the initiation of chemical interaction between precursors in the gas phase. The in-situ Optical Emission Spectroscopy (OES) was utilized to determine the exited reactive species existing in plasma discharge and possible mechanism of plasma-chemical reactions resulting in the formation of the solid phase. The chemical composition, structure and morphology of the surface of the as-deposited materials in dependence of parameters of the plasma process such as stoichiometry of the precursors in the gas phase, power of the plasma discharge and substrate temperature were characterized by SEM, XRD and AFM analytical techniques. The optical properties and electrophysical parameters of the samples were studied as well. Keywords Lead sulfide · Plasma-chemical synthesis · Optical emission spectroscopy · NIR photodetectors
Introduction The metal-sulphide based binary nanostructured semiconductors, in general, have been attracting growing interest as an effective material for the conversion of solar energy owing to their universal optical and electrical properties [1–4]. Among them, the lead sulphide (PbS) possesses the features making it one of the best candidates for meeting demanding industry requirements engaging high performance, fast response, smaller packages, and cost-effective solutions [5]. Besides, PbS photodetectors stand out for their industry-leading sensitivity-versus-cost ratio across the entire 1 to 3.5 micron of IR spectrum [6]. Single * Leonid Mochalov [email protected] 1
Nizhny Novgorod State Technical University n.a. R.E. Alekseev, Nizhny Novgorod, Russia
2
University of North Carolina, Charlotte, NC, USA
3
Lobachevsky University, Nizhny Novgorod, Russia
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Plasma Chemistry and Plasma Processing
element PbS detectors key applications include fire safety and flame detection, as well as process and quality control applications [7]. Additionally, PbS arrays are ideally suited for a range of applications including gas analysis, spectroscopy, process and quality control, and thermal imaging/hotspot detection in applications such as manufacturing and assembly process lines or in buildings and railway systems. This class compounds a cubic structure of the NaCl type. These are narrow-gap semiconductors, the band gap is, respectively, for PbS, PbSe, PbTe — 0.41, 0.29, and 0.32 eV. The electrophysical properties of lead chalcogenides s
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