Rapid Thermal Processing of Hydrogen Silsesquioxane for Low Dielectric Constant Performance
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J.N. BREMMER *, D. GRAY *, Y. LIU *, K. GRUSZYNSKI *, and S. MARCUS ** * Dow Coming Corporation, M/S CO41A1, P.O. Box 944, Midland, MI 48686
** STEAG Electronic Systems USA, 7755 S. Research Dr., Tempe, AZ 85284
ABSTRACT Low dielectric constant hydrogen silsesquioxane films were achieved by rapid thermal cure processing with production viable equipment. A reduced dielectric constant of k = 2.5-2.6 is demonstrated by optimizing rapid thermal cure process conditions to produce low density hydrogen silsesquioxane thin films. This is a significant reduction relative to production proven furnace cure processed hydrogen silsesquioxane with k = 2.9. Concurrent with reduced k performance is a characteristic film expansion which contributes to formation of a low density structure. A mechanism for film expansion and relevance to low k performance is described; and issues relative to integration of rapid thermal processed low k hydrogen silsesquioxane are discussed.
INTRODUCTION To address the need to reduce interconnect wiring capacitance of integrated circuits with device features < 0.18 iim , rapid thermal cure processing was investigated as a means to lower dielectric constant of hydrogen silsesquioxane (HSQ). While widely used in production of integrated circuits (ICs) with device features of 0.25 - 0.5 i.im, HSQ has minimum k capability of a 2.9 when processed by conventional inert furnace cure methods. ICs with device features
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