Solution growth of functional zinc oxide films and nanostructures
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Introduction In recent years, zinc oxide has become one of the key materials in the search for advanced applications in optoelectronics, sensing, piezoelectric, and magnetic applications as a low-cost alternative to existing state-of-the-art materials such as GaN or indium tin oxide (ITO).1–3 This is due to its large range of interesting intrinsic electrical, optical, and mechanical properties,1–3 including large bandgap (about 3.3 eV), semiconducting properties ranging from p-type and n-type (up to degeneracy) to semi-insulating, high electronic mobilities, large exciton energy (for light-emitting devices), and a lack of center of symmetry allowing piezoelectric applications. Another key aspect of ZnO is the possibility to prepare a large range of nanostructures, such as nanorods, nanotubes, nanobelts, nanopropellers, nanorings, and nanobows.4,5 Most of these nanostructures were initially prepared using high-temperature processes from the gas phase (thermal evaporation and reaction, chemical vapor deposition), as investigated in detail by Wang and co-workers.4,5 However ZnO, in contrast with many other key wide bandgap semiconductors such as GaN, has the unique advantage that it can be easily prepared in high quality by solution routes. This allows low-temperature (mostly
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