Status of 4H-SiC Substrate and Epitaxial Materials for Commercial Power Applications
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Status of 4H-SiC Substrate and Epitaxial Materials for Commercial Power Applications A.R. Powell, J.J. Sumakeris, R.T. Leonard, M.F. Brady, St.G. Müller, V.F. Tsvetkov, H.McD. Hobgood, A.A. Burk, M.J. Paisley, R.C. Glass, and C.H. Carter, Jr. Cree Inc, 4600 Silicon Drive, Durham, NC 27703, USA ABSTRACT The performance enhancements offered by the next generation of SiC high power devices offer potential for enormous growth in SiC power device markets in the next few years. For this growth to occur, it is imperative that substrate and epitaxial material quality increases to meet the needs of the targeted applications. We will discuss the status and requirements for SiC substrates and epitaxial material for power devices such as Schottky and PiN diodes. For the SiC Schottky device where current production is approaching 50 amp devices, there are several material aspects that are key. These include; wafer diameter (3-inch and 100-mm), micropipe density (
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