STM Tip-Induced Switching in Molybdenum Disulfide-Based Atomristors
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MRS Advances © 2019 Materials Research Society DOI: 10.1557/adv.2019.322
STM Tip-Induced Switching in Molybdenum Disulfide-Based Atomristors Jesse E. Thompson1, Brandon T. Blue1, Darian Smalley1, Fernand Torres-Davila1, Laurene Tetard1, Jeremy T. Robinson2 and Masahiro Ishigami1 1
Department of Physics and Nanoscience Technology Center, University of Central Florida, Orlando,
FL 32826, U.S.A. 2
Naval Research Laboratory, Washington D.C., 20375, U.S.A.
ABSTRACT
Scanning tunneling microscopy and spectroscopy (STM/STS) are used to electronically switch atomically-thin memristors, referred to as “atomristors”, based on a graphene/molybdenum disulfide (MoS2)/Au heterostructure. A gold-assisted exfoliation method was used to produce near-millimeter (mm) scale MoS2 on Au thin-film substrates, followed by transfer of a separately exfoliated graphene top layer. Our results reveal that it is possible to switch the conductivity of a graphene/MoS2/Au memristor stack using an STM tip. These results provide a path to further studies of atomically-thin memristors fabricated from heterostructures of two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs).
INTRODUCTION Devices with artificial intelligence (AI) capabilities are expected to have a disruptive influence on a panoply of economic and societal technologies, including autonomous navigation, remote sensing, finance, and medical diagnostics. Electronics that more closely mimic a human brain are considered necessary to enable implementations of AI to perform these tasks at sufficiently high speeds [1]. Current lithographic and power limitations have, however, constrained such “neuromorphic” computers to the equivalent power of ~10 6 neurons: a long way from the human brain’s 1011 neurons [2]. While there are many hardware and software approaches being attempted to realize such an “artificial brain” architecture, the majority require electronic
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switches with high spatial density, ultra-low power consumption, and time-dependent plasticity [3]. It has been recently demonstrated that ultra-low power, atomically-thin switches with time-dependent plasticity can be fabricated from stacking 2D layeredmaterials, such as graphene and MoS2 [4, 5]. These large-area memristors and electronic synapses are atomically-thin and demonstrate non-volatile switching, enabling lowpower operation comparable to other state-of-the-art devices, making them desirable for use in electronic synapses [6-11]. While it is known that the observed switching occurs at the interface between graphene and MoS2 and has been tentatively attributed to the migration of oxygen ions within similar memristor devices [4, 5], there remains some uncertainty as to the fundamental mechanisms of electronic switching in these devices. This is likely
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