Download Surface Passivation of AlGaN terminated and GaN Terminated HEMT Structures Studied by XPS

Queue processing for download document No title

You can start your download in 30 seconds

Recommend Documents
Al mole fraction dependence of deep levels in AlGaN/GaN-HEMT structures estimated by CV profiling

149 58 78KB

Growth of ZnSe-Based Compounds on Ge-Terminated GaAs Surface

208 107 2MB

Optical Properties of Deuterium Terminated Porous Silicon

198 66 298KB

AlGaN/GaN Structures Grown by HVPE: Growth and Characterization

191 34 127KB

Spectroscopic Investigation of Traps Producing Current Collapse In AlGaN/GaN Hemt Structures

146 13 114KB

Effects of GaN passivation with SiO 2 and SiN x studied by photoluminescence and surface potential electric force micros

163 120 196KB

Surface stabilization for higher performance AlGaN/GaN hemt with in-situ movpe SiN

140 12 192KB

High-Quality AlGaN/GaN HFET Structures Grown by MOCVD Using Intermediate High Temperature AlGaN/GaN Superlattices

223 68 263KB

Reduction in Gate Leakage Current of AlGaN/GaN HEMT by Rapid Thermal Oxidation

146 68 223KB

Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface

123 36 197KB

Microstructure and Surface Morphology of Ag and Au Films Grown on Hydrogen-Terminated Si(111) Substrates

191 69 2MB

Surface Recombination and Vacuum/GaN/AlGaN Surface Quantum Wells

137 84 186KB