Synthesis and Characterization of Methyltriethoxysilane Based Low Permittivity (Low-k) Polymeric Dielectrics
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Synthesis and Characterization of Methyltriethoxysilane Based Low Permittivity (Low-k) Polymeric Dielectrics Z. Gu*, R. Jeyakumar, S. Sivoththaman, and A. Nathan Department of Electrical and Computer Engineering, (* Chemical Engineering) University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada. ABSTRACT A low-permittivity (low-k) polymeric material has been synthesized using methyltriethoxysilane as base material. The films were reproduceably deposited, by spin-coating on Si wafers with a uniform thickness in the range of 0.3-0.5µm depending on speed. The parameters for spin coating (spin speed and spin time etc.,) have been optimized. The effects of various curing conditions on the structural and dielectric properties have been studied. Fourier Transform Infrared Spectroscopy (FTIR) shows prominent peaks of Si-CH3 stretch and Si-O stretch modes. Test structures on silicon were fabricated to measure the dielectric constant (k) of the material. The values of k were found to be in the range of 2.6-1.2 for annealing temperatures 150°C-450°C. The dielectric constant decreases as the curing temperature increases. INTRODUCTION Low-permittivity polymeric materials are potentially very attractive as inter-level dielectrics in a wide range of semiconductor devices. The interconnection (RC) delay can be reduced by the use of low-k materials. We have synthesized a low-k material using methyltriethoxysilane [1,2] as the base material. For material synthesis, an experimental set-up was built that performed the refluxing, hydrolysis, agitation, and polymerization steps. The final product is a high-flowing brownish liquid, which is spin coatable and yields a uniform film after coating and curing. The final films as well as the initial material were found to be very stable. In the present work, we report the synthesis and characterization of methyltriethoxysilane based polymeric dielectric films. Our goal is to use the methyltriethoxysilane film as an interlayer dielectric in TFT arrays. EXPERIMENTAL Experimental set-up The low-k material was synthesized using the reflux technique. Fig. 1 shows the experimental set-up used for the synthesis. A 500 ml, 3-necked, round bottom flask with a stirrer and thermometer was used as the reaction vessel. The liquid reagents were introduced into the flask by means of a pipet. A Caframo BDC 3030 stirrer with a digitally controlled brushless DC motor was used for agitation control. The stirrer connected to a complete assembly with glass
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shaft and ground bearing through an adaptor. Teflon made stirrer blade with a long groove keyhole provided easy insertion into flask neck and proper positioning for stirring action. The agitation speed was sufficiently high to ensure thorough mixing. A water jacketed condenser was used to prev
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