Synthesis of metal oxide thin films by liquid-phase deposition method
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Synthesis of metal oxide thin films by liquid-phase deposition method Shigehito Dekia) Department of Chemical Science & Engineering, Faculty of Engineering, Kobe University, Rokkodai-cho, Nada-ku, Kobe 657, Japan
Yoshifumi Aoi Department of Materials Chemistry, Faculty of Science and Technology, Ryukoku University, Seta, Otsu 520-21, Japan (Received 17 September 1997; accepted 16 December 1997)
A novel wet process to synthesize metal oxide thin films has been developed. The process is called the Liquid-Phase Deposition (LPD) method. In this method, metal oxide or hydroxide thin films are formed on the substrate through the ligand-exchanging (hydrolysis) equilibrium reaction of metal-fluoro complex species and the F2 consumption reaction of a F2 scavenger. The LPD method is a unique soft solution process, and is performed by very simple procedures. In this paper, we develop a method of preparing composite oxide thin films, Pt-dispersed titanium oxide, and iron-nickel binary oxide thin films.
I. INTRODUCTION
Metal oxides and/or multicomponent oxides have attracted interest as inorganic functional materials in the fields of electrical and optical applications. They possess various kinds of interesting electrical and optical properties, because they contain some elements in more than the single valence state, and there is an electronic transition from a low valence state to a higher valence state. Such materials are used as thin films in many cases. At present, these metal oxide and/or multicomponent oxide thin films are widely applied to semiconductive materials, dielectric materials, sensor and electrode materials, catalysts, and so on. Generally, methods for preparing thin films can be classified into physical methods and chemical methods. Physical methods include dry processes such as vacuum evaporation and sputtering. Chemical methods include a dry process such as chemical vapor deposition (CVD) and wet processes such as electrodeposition, electroless deposition, dipping, and spin coating of sol-gel reagents. Both types of processes are widely applied to preparing various kinds of metal oxides; however, there are some problems. With the physical processes it is difficult to control precisely the composition of metal oxides, and the dry process requires special apparatuses for the deposition. Also they are not suitable for the preparation of thin films on a substrate with large surface areas, because these methods usually need vacuum or a low pressure atmosphere. For conventional wet processes, substrates are restricted to electrically conductive materials for the a)
Author to whom correspondence should be addressed. J. Mater. Res., Vol. 13, No. 4, Apr 1998
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electrodeposition method, and for the sol-gel method, it is difficult to prepare thin films on a substrate with complex surface morphologies. A new process, which overcomes some of those problems, has been developed.1,2 This process is called the Liquid-Pha
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