The Evolution of Nitride Semiconductors
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I. AKASAKI Dept. of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, JAPAN
ABSTRACT The great scientific and commercial success of the group-III nitrides in recent years is the result of persistent fundamental research over a time span of three decades. In the late 60's and in the early 70's the very heart of gallium nitride research was located in J.I. Pankove's laboratory at RCA. There the first single crystalline GaN was grown by Maruska and Tietjen and the very first GaN light emitting diodes were produced by Pankove in September 1971, 26 years ago. Since then the community of nitride research has come a long and troublesome way, but it has succeeded. This 1997 Fall Meeting Symposium on Nitride Semiconductors of the Materials Research Society is dedicated to Professor J.I. Pankove for his outstanding and groundbreaking contributions in the early development of group-III nitride research. This paper reports a historical summary of the evolution of the field summarizing the landmark contributions that have led to the current status of success. INTRODUCTION Nitride semiconductors are currently experiencing a most exciting development. Within a very short period of some three years, high brightness blue and green light emitting diodes (LEDs), high frequency field effect transistors (FETs), UV and blue laser diodes (LDs) and transistors operating at dull red temperatures have been made possible and demonstrated. Huge new markets have been opened, developed and are being delivered in such a short period of time. One of the most visible products in recent years, literally visible as a bright color of blue, has ignited researchers, manufacturers and most importantly all of us as customers. The rapid development must have surprised everybody. It may appear that everything could be achieved within such a short period of time. But this would be a big mistake because it did not start just three fiscal years back in time! No - we have to go back as far as 1970, down to Princeton, to find the scientist of the first hour, Jacques Pankove, studying the luminescence properties of GaN. This Nitride Semiconductors Symposium of the 1997 Fall Meeting of the Materials Research Society is dedicated to Professor Jacques Pankove for his pioneering work in development of the field of the wide bandgap nitride semiconductors. We report a brief overview of the development of the nitride semiconductors highlighting the major breakthroughs and the people behind it. Sharing this development as a long time colleague in the nitrides it is the author's special honor to report this development from his own perspective.
Mat. Res. Soc. Symp. Proc. Vol. 482 © 1998 Materials Research Society
Source INSPEC
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