Tuning the physical properties of amorphous In-Zn-Sn-O thin films using combinatorial sputtering
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Functional Oxides Research Letter
Tuning the physical properties of amorphous In–Zn–Sn–O thin films using combinatorial sputtering P.F. Ndione, National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, CO 80401, USA A. Zakutayev, National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, CO 80401, USA M. Kumar‡, Colorado School of Mines, 1500 Illinois Street, Golden, CO 80401, USA C.E. Packard, National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, CO 80401, USA; Colorado School of Mines, 1500 Illinois Street, Golden, CO 80401, USA J.J. Berry, J.D. Perkins, and D.S. Ginley, National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, CO 80401, USA Address all correspondence to P.F. Ndione at [email protected] (Received 23 June 2016; accepted 14 November 2016)
Abstract Transparent conductive oxides and amorphous oxide semiconductors are important materials for many modern technologies. Here, we explore the ternary indium zinc tin oxide (IZTO) using combinatorial synthesis and spatially resolved characterization. The electrical conductivity, work function, absorption onset, mechanical hardness, and elastic modulus of the optically transparent (>85%) amorphous IZTO thin films were found to be in the range of 10–2415 S/cm, 4.6–5.3 eV, 3.20–3.34 eV, 9.0–10.8 GPa, and 111–132 GPa, respectively, depending on the cation composition and the deposition conditions. This study enables control of IZTO performance over a broad range of cation compositions.
Introduction Transparent conducting oxides (TCO) have attracted considerable interest as materials because of their important role as contacts and active elements in transparent thin-film transistors, organic light-emitting diodes, flexible displays, and solar cells.[1–3] Historically, polycrystalline tin-doped In2O3 (ITO) has been one of the preeminent materials for transparent contacts due to its good electrical and optical properties. However for many applications, the limitations of ITO, including its low work function, high processing temperature, rough surface, and chemical incompatibility may limit its utility. Other binary TCO materials, such as fluorinated SnO2 (FTO), and Al- or Ga-doped ZnO (AZO, GZO)[4, 5] have some desirable properties, but do not meet all the criteria for many emerging applications, leading to an increasing search for new materials. These limitations have created an increased interest in ternary materials, such as indium zinc tin oxide (IZTO), as promising candidates for ITO substitutes.[6, 7] In particular, the fabrication of amorphous IZTO (a-IZTO) thin films is of increasing interest. Foremost, amorphous materials are deposited at lower temperatures than their crystalline counterparts. This simplifies deposition/manufacturing processes and expands the range of compatible substrates upon which the
‡ Present address: Department of Physics, Indian Institute of Technology Ropar, PB-140 001, India.
material can be deposited, such as plastics, potentially reducing cost and improving throughpu
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