Raman and Spectroscopic Ellipsometry Studies of P-Doped Poly-Si
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wafer #2 #4 #6 #8 #10 #12 #14 #7 #16 #18 #30 #22 #24 #26
poly thickness NONE
1500 A
P content N/A 20cmM 3 3x 100
1500A
3 20 cm3' 3x 102° 10 cm-
1500 A
3x
3000 A
-3
annealed at NONE NONE 8000 C/3 hrs 10000 C/12 min NONE 8000 C/3 hrs 10000 C/12 min 8000 C/3 hrs NONE 8000 C/3 hrs 10000 C/12 min NONE 8000 C/3 hrs 1000' C/12 min
TABLE 1. Nominal thickness, phosphorus concentration (determined by secondary ion mass spectroscopy), and annealing conditions for poly-Si wafers studied here.
Raman spectra were acquired at 300 K, 457.9 nm, and 5 mW (to avoid laser heating) using a triple-spectrometer 3000 3x 1020 cm3 (with CCD) in high-dispersion additive 300 A I X1020 cm3 mode. A microscope was used to focus the cm3 1021 15ooA X I 3 laser (
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