Real Time Spectroscopic Ellipsometry Studies of the Solid Phase Crystallization of Amorphous Silicon

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1Wfilament

Turbo-

spectrometer

Collimated SiH 4

I

Photodiode array detector

motor.

trigger

fpowe

control

H2 PH"'3° -1 °"•° Analyzer micro-pr, smori

PC

Detector

ro•- r..sor

FIG. 1 Experimental apparatus used for RTSE studies of the growth and SPC of a-Si:H. The a-Si:H films are deposited by remote PECVD, and the film/substrate structures are heated by a filament mounted in a cavity behind the sample. RTSE is applied to characterize film structure and thickness during growth, the near-surface annealing temperature, and the crystallization kinetics. 170

1 [--- t=0 s

160

" •'•-

"t=50

•3014050 C -T=645 5-

30 -

t=300 s -------

s t=700 t=000s 5 s

a-Si:H n-layerTc=645 0C

20 10 0

0

.

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