Rapid Thermal Annealing of Silicon using an Ultrahigh Power ARC LAMP
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RAPID THERMAL ANNEALING POWER ARC LAMP
OF SILICON USING AN ULTRAHIGH
R. T. HODGSON, J. E. E. BAGLIN and A. E. MICHEL IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 S. MADER IBM Corporation, Hopewell Junction, New York 12533 J. C. GELPEY Eaton Ion Implantation Systems, 16 Tozer Road, Beverly, MA 01915
ABSTRACT We have used an ultrahigh power, 100kW vortex cooled arc lamp to anneal As+ implant damage in silicon wafers. When the wafer temperature was held above 1100 0 C for ~1sec, TEM analysis indicated that the material was free of extended defects. The dopant diffused much more rapidly than would be expected from the usual models. However, preliminary results indicate that defect free material can be produced with dopant movement limited to ~100A..
INTRODUCTION
In the past few years, experiments on annealing of ion implanted semiconductor wafers have extended the time ranges of interest from milliseconds to picoseconds with the aid of various lasers.[1-4] Even more recently, incandescent and arc sources have been proposed[5-9] as sources of radiant energy which would be more feasible in manufacturing than lasers. The time scales for annealing, measured in seconds, using such sources lie between the extensively investigated regions of laser annealing and oven annealing. Nanosecond pulsed lasers produce material free of extended defects if sufficient energy to melt below the damage produced by the implanted ions is used. In this case, however, the dopant ions diffuse rapidly in the molten material, and the final dopant distribution is quite different than the "as implanted" distribution. "cw" laser annealing, on the other hand, does not melt the silicon nor move the dopant, but leaves many defects. The question remains - is there a time temperature region which will remove implant damage and not move dopant ions? Mat. Res.
Soc. Symp. Proc. Vol. 13 (1983) QElsevier Science Publishing Co.,
Inc.
356
EXPERIMENT We have investigated annealing the damage caused by arsenic implants in silicon using a single argon arc lamp. The arc, which is struck through a vortex in water which cools the interior walls of the surrounding quartz tube, can be run continuously with 100 kilowatts of input power. About half of this power appears as visible and near IR light which, when collected and concentrated uniformly on a four inch silicon wafer, can raise the wafer temperature to the melting point in a few seconds. The temperature of the wafer is measured by scanning the side of the wafer opposite to the lamp with calibrated infrared optical pyrometer (10msec response time). Arsenic implanted wafers were annealed with various time-temperature cycles. Sheet resistivity, He ion backscattering, channeling, and TEM studies were carried out to test the material properties and the distribution of dopant. RESULTS AND DISCUSSION
5 t-
10 sec
Figure 1 Wafer temperature vs. tim e. 5sec 300amp.
A typical trace of the wafer temperature is given in Fig. 1 for a 5 second, 300 amp treatment of a 3" wafer (Sample 17).
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