Review and perspective on ferroelectric HfO 2 -based thin films for memory applications
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Review and perspective on ferroelectric HfO2-based thin films for memory applications Min Hyuk Park, NaMLab gGmbH, Noethnitzer Str. 64, 01187 Dresden, Germany; School of Materials Science and Engineering, College of Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan 46241, Republic of Korea Young Hwan Lee, Department of Materials Science and Engineering, Inter-University Research Center, College of Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea Thomas Mikolajick, NaMLab gGmbH, Noethnitzer Str. 64, 01187 Dresden, Germany; Chair of Nanoelectronic Materials, TU Dresden, Dresden 01069, Germany Uwe Schroeder, NaMLab gGmbH, Noethnitzer Str. 64, 01187 Dresden, Germany Cheol Seong Hwang, Department of Materials Science and Engineering, Inter-University Research Center, College of Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea Address all correspondence to Uwe Schroeder at [email protected], Cheol Seong Hwang at [email protected] (Received 27 June 2018; accepted 9 August 2018)
Abstract The ferroelectricity in fluorite-structure oxides such as hafnia and zirconia has attracted increasing interest since 2011. They have various advantages such as Si-based complementary metal oxide semiconductor-compatibility, matured deposition techniques, a low dielectric constant and the resulting decreased depolarization field, and stronger resistance to hydrogen annealing. However, the wake-up effect, imprint, and insufficient endurance are remaining reliability issues. Therefore, this paper reviews two major aspects: the advantages of fluorite-structure ferroelectrics for memory applications are reviewed from a material’s point of view, and the critical issues of wake-up effect and insufficient endurance are examined, and potential solutions are subsequently discussed.
Introduction Ferroelectric properties in fluorite-structure oxides were first reported in 2011 by Böscke et al. and have since attracted increasing interest in the field of ferroelectricity and nonvolatile memories.[1–6] Figure 1 shows the variations in the annual number of papers on fluorite-structure ferroelectrics and the annual citations of the original paper by Böscke et al.[1] since 2011. As shown in the figure, the number of papers is rapidly increasing, and more than 100 papers are expected to be published in 2018 despite 8 years short history of fluorite-structure ferroelectrics. Various applications, such as ferroelectric memories,[3,7–10] energy harvesters,[11,12] electrostatic supercapacitors,[12–14] electrocaloric coolers,[11,12,15,16] and pyroelectric sensors,[17,18] have been suggested for fluorite-structure ferroelectrics due to their advantages over the conventional perovskite-structure ferroelectrics. Ferroelectric memories with ferroelectric doped HfO2 have also been suggested to be useful for neuromorphic devices and random-number generators.[19,20] The ferroelectric memory is one of the most important appl
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