RF Analysis of Double-Gate Junctionless Tunnel FET for Wireless Communication Systems: A Non-quasi Static Approach
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https://doi.org/10.1007/s11664-020-08538-4 Ó 2020 The Minerals, Metals & Materials Society
RF Analysis of Double-Gate Junctionless Tunnel FET for Wireless Communication Systems: A Non-quasi Static Approach PREETI SHARMA ,1 JAYA MADAN and RAJNISH SHARMA 1,4
,1,2 RAHUL PANDEY
,1,3
1.—VLSI Centre of Excellence, Chitkara University Institute of Engineering and Technology, Chitkara University, Rajpura, Punjab, India. 2.—e-mail: [email protected]. 3.—e-mail: [email protected]. 4.—e-mail: [email protected]
The optimum and acceptable combination of control gate (CG) process parameters, such as dielectric materials, thickness, and metal work function for a double-gate junctionless tunnel field-effect transistor, remain a subject of great interest among researchers. We report here on the significant impact of CG process variations on the radio-frequency (RF) parameters of this device structure. Studies carried out using a non-quasi-static model with CG process variations have been analyzed for current gain (h21) and unilateral power gain with the help of a Silvaco Atlas device simulator. Systematic investigations reveal that the combination of CG process parameters, such as dielectric material (SiO2) with the thickness of 2 nm and CG metal (aluminum-h100i), provide the optimum RF characteristics, i.e., fT (2.9 GHz) and fmax (15 GHz), while maintaining the switching ratio (0.161 9 109), intrinsic capacitances (Cgg = 0.7 fF), and transconductance (3.8 lS) at the bias conditions of Vgs (1 V) and Vds (1 V). The results have been thoroughly interpreted from energy band diagrams and the associated band-to-band tunneling rate. The studies reported here may prove to be useful for further exploring the use of the suggested device structure for Internet of Everything communications and other related applications. Key words: Band-to-band tunneling, charge plasma, non-quasi static, DG TFET, Wentzel–Kramers–Brillouin approximation
INTRODUCTION Wireless technology has remained a backbone for the growth of many allied fields, like agricultural, educational, military, medical, infrastructure, and urban development industries, etc. However, in recent years, rapid advances in this field have made possible almost an exponential growth of the Internet of Everything (IoE) in applications such as automotive, aerospace, embedded medical monitors, environmental control, and biomedical sensors, etc.1 Most of these applications are dependent upon the
(Received June 10, 2020; accepted September 29, 2020)
radio frequency (RF) band for end-to-end communication with the demand for the low-cost, low-power, and higher data rate (> 1 Gbps) transmissions without interference. Communications-related equipment, like data centers, routers, and sensors, etc. used in IoE communications, are powered by semiconductor-based electronic devices. To assess the capability and stability of these devices specifically for their possible application in RF-based circuits, benchmark figures of merit, like the cut-off frequenc
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