Sensitivity Optimization of MEMS Based Piezoresistive Pressure Sensor for Harsh Environment
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ORIGINAL PAPER
Sensitivity Optimization of MEMS Based Piezoresistive Pressure Sensor for Harsh Environment Priyanshu Verma 1 & Deepak Punetha 2
&
Saurabh Kumar Pandey 2
Received: 1 October 2019 / Accepted: 15 December 2019 # Springer Nature B.V. 2020
Abstract Silicon carbide piezoresistive pressure sensor is more suitable for harsh environment due to its wide bandgap, corrosion tolerance, excellent chemical inertness, high Young’s modulus and high carrier mobility. In this paper, a square diaphragm with X-shaped piezo-resistor located on high stress region of the membrane has been analysed. The simulation study has been done with different materials like silicon, silicon carbide, and polysilicon using device simulation software. Various device characteristics of pressure sensors are measured and compared for different parameter variations to get optimum performance. The results show that for introductory parameters, sensitivity with silicon carbide is 1.358 times to that of silicon. The work presented in this paper motivates researchers for alternate choice of semiconducting materials for piezoresistors and diaphragm to get optimum device performance. Keywords Micro electro-mechanical system . Piezoresistor . Stress . Silicon compound materials . Harsh environment . Sensitivity
1 Introduction Micro Electromechanical Systems (MEMS) based piezoresistive device has gained popularity in engineering, biotechnology, material science and enormous applications over the past few decades. MEMS possess unique characteristics such as high accuracy, efficiency, low power consumption, etc., which make it appropriate for various fields like biomedical, automobile, optoelectronics, and industries. Investigations are going on to improve the sensitivity, reliability, and low-cost production which can broaden its application
* Deepak Punetha [email protected] Priyanshu Verma [email protected] Saurabh Kumar Pandey [email protected] 1
Department of Electronics and Communication Engineering, National Institute of Technology Patna, Patna, Bihar 800005, India
2
Sensors and Optoelectronics Research Group (SORG), Department of Electrical Engineering, Indian Institute of Technology Patna, Bihta, Bihar 801103, India
areas [1, 2]. Piezoresistive devices have been widely used in pressure sensor, cantilever force sensor, accelerometers, etc. [3]. Among them piezoresistive pressure sensors has been very pervasive choice in various fields such as automobiles, aerospace, and biomedical devices. It possesses distinct properties such as simple working principle, versatility, linear response, long- term stability, etc. [4]. Piezoresistive pressure sensor consists of a diaphragm with piezoresistive elements, which get deformed when external pressure is applied and results in output voltage due to change in resistance of piezoresistor. The applied pressure can be calculated by measuring the change in resistance of piezoresistive element using the Wheatstone bridge principle [3]. Various piezoresistive elements such as s
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