Silicon Oxide Composite Film Fabricated by Wet Process at Low Temperature as a Passivation Layer for Printable Electric
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1113-F09-25
Silicon Oxide Composite Film Fabricated by Wet-Process at Low Temperature as a Passivation Layer for Printable Electric Device
Sei Uemura, Kouji Suemori, Manabu Yoshida, Satoshi Hoshino, Noriyuki Takada, Takehito Kodzasa, Nobuki Ibraki and Toshihide Kamata Photonics Research Institute, National Institute of Advanced Industrial Science and Technology, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
ABSTRACT Printable devices have been attracting considerable interest because of their application to flexible large-area devices in low cost printable electronics. In order to fabricate such devices, it is necessary to discover a passivation film and develop an efficient process for its preparation. We have previously reported that silicone oxide film is obtained with high density by UV irradiation to silazane compound film at low temperature [1]. The silicon oxide film has electric resistivity more than 10-15 Ωcm and electric strength more than 7 MV/cm. In order to apply the film to passivation layer in printable device, in this paper, preparation of nano-composite film with silicon oxide and clay mineral was investigated.
I%TRODUCTIO% Printing techniques for electric materials such as semiconductor, dielectric, and electrode have been studied extensively from the standpoint of printable electric device. Printing process can be carried out at a temperature lower than that at which a vacuum process is carried out. Therefore, these processes can be used for fabricating electronic devices on plastic substrates, yielding flexible devices such as displays, electronic papers, ID tags, and sensors. During device fabrication, printing processes are most efficient when all vacuum processes are replaced by solution processes. Printing inks for use in electronic materials such as semiconductors, dielectrics, and electrodes have been studied extensively from the standpoint of the fabrication of switching transistors of pixels in flexible displays. However, promising preparation techniques have not been appeared because passivation layer fabricated by solution processes have not yet reached satisfactory performances. One of the important performances of passivation layer is permeability barrier to moisture. Since most printable semiconductors such as organic material and/or electrode are damaged by moisture, the device driven in the presence of moisture shows unstable electric property and short lifetime. In most printable electric device, permeability of moisture into the device permitted is less than 10mg/m2day. In the case of organic light emitting diode, low permeability is particularly necessary, i.e., 1µg/m2 day. Such high performance has not yet obtained in passivation film produced by solution process.
We have reported the preparation method of silicon oxide by solution process at low temperature [1]. High-density silicon oxide film is obtained by UV irradiating the silazane compound film. The film was prepared by spin-coating a solvent containing silazane compound and then dried in vacuum chamber
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