Single Crystalline InN Films Grown on Si Substrates By Using A Brief Substrate Nitridation Process
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Single Crystalline InN Films Grown on Si Substrates By Using A Brief Substrate Nitridation Process Tomohiro Yamaguchi, Kazuhiro Mizuo, Yoshiki Saito, Takuma Noguchi, Tsutomu Araki and Yasushi Nanishi Department of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, JAPAN. Takao Miyajima Core Technology Development Center, Core Technology & Network Company, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, JAPAN. Yoshihiro Kudo Technology Solutions Center, Sony Corporation, 4-16-1 Okata, Atsugi, Kanagawa 243-0021, JAPAN.
ABSTRACT InN films were grown on Si (111) substrates by radio-frequency plasma-excited molecular beam epitaxy. InN films highly oriented to the c-axis were obtained by optimizing growth conditions in the direct growth on Si. Growth of single crystalline InN films was realized on Si substrates with substrate nitridation for 3 min. On the other hands, when the substrate nitridation was lasted over 30 min, obtained InN films were polycrystalline due to the amorphous SiNx layer formed on a substrate surface. We also studied the local atomic structure in the single crystalline InN film using extended X-ray absorption fine structure measurements.
INTRODUCTION As indicated by its recent research popularity[1-8], InN has a large potential for photonic and electronic applications. InN, including its alloys, would also have a great potential for a new high efficiency solar cell covering the full solar spectrum. However, InN has few suitable substrates due to its large lattice mismatch with most substrates. This means that a good initial growth process is needed for high quality growth. Substrate nitridation is one such initial process that has been studied. Substrate nitridation is well known to improve the crystallinity of InN on sapphire[9-11], GaAs[12], and GaP[12] substrates. On the other hand, however, the role of nitridation for InN growth on Si is less clear. Yamamoto et al. [9] reported that substrate nitridation prevented to grow InN films with metalorganic chemical vapor deposition (MOCVD) because of forming an amorphous SiNx layer on Si substrate surface. Therefore, on Si, methods to grow InN films are careful to avoid forming SiNx layers [13]. This includes methods that use molecular beam epitaxy (MBE) [14,15]. However, growing single crystalline InN films on Si remains difficult [9,13-18]. Recently, effects of substrate nitridation on Si have been studied. Yodo et al. [19] reported that substrate nitridation prevented to contain cubic phases in hexagonal InN films. We succeeded to realize single crystalline hexagonal InN films by using substrate nitridation and a low-temperature buffer layer deposition [20,21]. In this paper, we describe how our use of nitridation allowed us to grow single crystalline hexagonal InN films on Si. We then describe the local atomic structure of this film.
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EXPERIMENTAL DETAILS InN films were grown on Si (111) substrates by radio-frequency plasma-excited MBE (RFMBE). The sources used were elemental In from a
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