Stereometric analysis of TiO 2 thin films deposited by electron beam ion assisted
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Stereometric analysis of TiO2 thin films deposited by electron beam ion assisted Reza Shakoury1 · Ali Arman2 · Ştefan Ţălu3 · Davoud Dastan4 · Carlos Luna5 · Sahar Rezaee6 Received: 2 October 2019 / Accepted: 2 May 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract The micromorphology and semiconductor properties of T iO2 thin films growth using different ion beam energies have been finely analyzed using atomic force microscopy (AFM), ultra-violet visible (UV–visible) spectroscopy and stereometric analysis. The AFM measurements and surface stereometric analysis are essential for the accurate characterization of the 3-D surface topographic features and allow the determination of the 3-D surface texture parameters that influence the optical properties of the material. The samples were divided into four groups to discuss the obtained results, according to the ion beam energy applied in the sample preparation. The results obtained from experimental measurements suggested that the surface of samples prepared at lower beam energy had the most regular surface (Sq = 6.25 nm), while the most irregular surface was found in samples prepared with the highest ion beam energy (Sq = 13.40 nm). The transmittance (%) and reflectance (%) spectra, and the band gap energy experienced noticeable changes with increasing applied energy and deposition pressures due to the increase of the surface tension and decrease of the grain sizes. Our investigation shows that the deposition pressure and applied energy affect the optical and the roughness of titania thin films, which partially contribute to the functionality of the surface that, in turn, makes titania useful for the fabrication of different optoelectronic devices. Keywords TiO2 thin films · AFM · Stereometric analysis · 3-D surface microtexture · Optical properties * Sahar Rezaee [email protected] 1
Department of Physics, Faculty of Science, Imam Khomeini International University, Qazvin, Iran
2
Vacuum Technology Group, ACECR, Sharif University Branch, Tehran, Iran
3
Development and Innovation Management (DMCDI), Technical University of Cluj-Napoca, The Directorate of Research, Constantin Daicoviciu St., No. 15, 400020 Cluj‑NapocaCluj County, Romania
4
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA
5
Facultad de Ciencias Físico Matemáticas (FCFM), Universidad Autónoma de Nuevo León (UANL), Av. Universidad s/n, San Nicolás de Los Garza, 66455 Nuevo León, Mexico
6
Department of Physics, KermanshahBranch, IslamicAzadUniversity, Kermanshah, Iran
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R. Shakoury et al.
1 Introduction Semiconductor oxides behave somewhat similar to metals and insulators; therefore, their properties can be tuned for a variety of optoelectronics, electrochemical and energy-related applications (Zare et al. 2018; Sun et al. 2020; Yin et al. 2020; Qiu et al. 2015; Yang et al. 2020; Kruchinin et al. 2017; Jafari et al. 2019; Grayeli-Korpi et al. 20
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