Study the Properties of Solution Processable CZTS Thin Films Induced by Annealing Treatment: Study of Annealing Time
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URFACES, INTERFACES, AND THIN FILMS
Study the Properties of Solution Processable CZTS Thin Films Induced by Annealing Treatment: Study of Annealing Time R. A. Gani Shaikha, S. A. Morea, G. G. Bisena, and S. S. Ghosha,* a
Optoelectronics Laboratory, Department of Physics, Kavayitri Bahinabai Chaudhari North Maharashtra University, Jalgaon, Maharashtra, 425001 India *e-mail: [email protected] Received May 13, 2020; revised May 13, 2020; accepted May 21, 2020
Abstract—Cu2ZnSnS4 is suitable for high-performance thin-film solar cell because of its high absorbance coefficient, presence of non-toxic elements, excellent optoelectronic properties, and a near-perfect direct band gap. The effect of thermal annealing time (1–4 h) on the optical, morphological, and structural properties of Cu2ZnSnS4 coated through a simple solution processable method has been studied in the present work. All the CZTS films are crystalline in nature with kesterite structure as shown by X-ray diffraction studies. Crystallite size, strain, and dislocation density were calculated. However, no notable changes in these parameters were obtained by varying the annealing time in the above range. Field emission scanning electron microscopy images show good quality compact films with particle size in the order of 10–15 nm. Absorption spectroscopy results show an optical band gap of 1.46 eV. Raman spectroscopy was used to check binary or ternary phases present. It shows that the impurity phase decreases and the pure Cu2ZnSnS4 phase was obtained by increasing the annealing time to 3 and 4 h. Keywords: Cu2ZnSnS4, thermal annealing, optical, characterization, Raman spectroscopy DOI: 10.1134/S1063782620090110
1. INTRODUCTION In recent years, the worldwide attraction for research in the areas of photovoltaics (PV) has increased, due to challenges like limited availability and serious environmental issues associated with conventional energy sources [1]. In the last decade, progress in thin-film technologies has strongly promoted the second-generation solar cells. Thin-film technologies effectively reduce the cost of material due to the demand for fewer material and solution processability [2]. Besides, thin films can be easily deposited on a substrate like glass, stainless steel, plastic, etc. [3]. There are many thin-films solar-cell technologies available that make use of amorphous silicon, copper indium selenide (CIS), cadmium telluride (CdTe), copper indium gallium selenide (CIGS), gallium arsenide (GaAs) [4]. Solar cells based on the above materials have high light-to-electricity conversion efficiency of ~20% and are comparatively low in cost. However, amorphous silicon is not stable, GaAs and CdTe contain toxic elements like arsenic and cadmium, CIGS contain rare indium, and therefore these type of solar cell materials will not be effective [5]. The search for alternative thin-film technologies is in progress through active research. Currently, the quaternary compound Cu2ZnSnS4 (CZTS) is widely considered as an alternative PV material due to the prop-
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