Synthesis of tungsten ditelluride thin films and highly crystalline nanobelts from pre-deposited reactants
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Tungsten https://doi.org/10.1007/s42864-020-00056-4
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ORIGINAL PAPER
Synthesis of tungsten ditelluride thin films and highly crystalline nanobelts from pre‑deposited reactants John B. Mc Manus1,2 · Cansu Ilhan1,2 · Bastien Balsamo2,3 · Clive Downing1,2 · Conor P. Cullen1,2 · Tanja Stimpel‑Lindner4 · Graeme Cunningham1,2 · Lisanne Peters1,2 · Lewys Jones2,5 · Daragh Mullarkey5 · Igor V. Shvets5 · Georg S. Duesberg1,4 · Niall McEvoy1,2 Received: 23 April 2020 / Revised: 9 July 2020 / Accepted: 9 July 2020 © The Nonferrous Metals Society of China 2020
Abstract Tungsten ditelluride (WTe2) is a layered transition metal dichalcogenide (TMD) that has attracted increasing research interest in recent years. WTe2 has demonstrated large non-saturating magnetoresistance, potential for spintronic applications and promise as a type-II Weyl semimetal. The majority of works on W Te2 have relied on mechanically exfoliated flakes from chemical vapour transport (CVT)-grown crystals for their investigations. While producing high-quality samples, this method is hindered by several disadvantages including long synthesis time, high-temperature annealing and an inherent lack of scalability. In this work, a synthesis method is demonstrated that allows the production of large-area polycrystalline films of WTe2. This is achieved by the reaction of pre-deposited films of W and Te at a relatively low temperature of 550 °C. Sputter X-ray photoelectron spectroscopy reveals the rapid but self-limiting nature of the oxidation of these WTe2 films in ambient conditions. The WTe2 films are composed of areas of micrometre-sized nanobelts that can be isolated and offer potential as an alternative to CVT-grown samples. These nanobelts are highly crystalline with low defect densities indicated by transmission electron microscopy and show promising initial electrical results. Keywords Two-dimensional materials · Tungsten ditelluride · Film conversion · Electrodeposition · Nanoelectronics
1 Introduction Electronic supplementary material The online version of this article (https://doi.org/10.1007/s42864-020-00056-4) contains supplementary material, which is available to authorized users. * John B. Mc Manus [email protected] * Niall McEvoy [email protected] 1
School of Chemistry, Trinity College Dublin, Dublin 2 D02 PN40, Ireland
2
AMBER Centre, CRANN Institute, Trinity College Dublin, Dublin 2 D02 PN40, Ireland
3
SIGMA Clermont, Université Clermont Auvergne, 63000 Clermont–Ferrand, France
4
Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, Universität der Bundeswehr München, 85579 Neubiberg, Germany
5
School of Physics, Trinity College Dublin, Dublin 2 D02 PN40, Ireland
Transition metal dichalcogenides (TMDs) are a family of layered materials whose nanoscale forms have been extensively studied over the last number of years. This interest is due to their varied and layer-dependent properties, which give them a wide range of potential applications [1, 2]. Unlike som
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