Temperature Dependent Current-Voltage Characteristics of Pt/MoS 2 Schottky Junction
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MRS Advances © 2019 Materials Research Society DOI: 10.1557/adv.2019.283
Temperature Dependent Current-Voltage Characteristics of Pt/MoS2 Schottky Junction Neetika1, Ramesh Chandra2 and V. K. Malik1 1
Department of Physics, Indian Institute of Technology Roorkee, Roorkee 247667, India
2
Nanoscience Laboratory, Institute Instrumentation Centre, Indian Institute of Technology Roorkee, Roorkee 247667, India
*Corresponding author: [email protected]
Abstract
Molybdenum disulphide (MoS2) is one of the transition metal dichalcogenide (TMD) materials which has attracted attention due to its various interesting properties. MoS2 is very promising for electronic and optoelectronic devices due to its indirect band gap (~1.2 eV) for few layer and direct band gap (~1.8 eV) for monolayer MoS2. In MoS2 based Schottky devices, Schottky barrier height depends on the thickness of MoS2 because of its tunable electronic properties. Here, we have used DC sputtering technique to fabricate metal-semiconductor junction of MoS2 with platinum (Pt) metal contacts. In this work, MoS 2 thin film (~10 nm) was deposited on p-Silicon (111) using DC sputtering technique at optimized parameters. Schottky metallization of Pt metal (contact area ~ 0.785x10 -2 cm2) was also done using DC sputtering. Current-voltage (I-V) characteristics of the Pt/MoS2 Schottky junction have been investigated in the temperature range 80-350K. Forward I-V characteristics of Pt/MoS2 junction are analysed to calculate different Schottky parameters. Schottky barrier height increases and ideality factor decreases on increasing the temperature from 80-350K. The I-V-T measurements suggest the presence of local inhomogeneities at the Pt/MoS 2 junction. Schottky barrier inhomogeneities occur in case of rough interface. In such cases, the Schottky barrier height does not remain constant and vary locally. Current transport through the Schottky junction is a thermally activated process. As temperature increases, more and more electrons overcome the spatially inhomogeneous barrier height. As a result, the ideality factor becomes close to unity and apparent barrier height increases due to increase in temperature.
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INTRODUCTION: Nowadays, two dimensional (2D) transition metal dichalcogenide materials such as molybdenum disulphide (MoS2) have been of great interest due to their wide range of device applications[1–5]. MoS2 is very interesting semiconducting material with indirect band gap (1.9eV) for multilayers and direct band gap (1.2eV) for monolayer. This tunable band gap of MoS2 makes it very important for various electronic and optoelectronic device applications[6]. Schottky barrier diode (SBD) is fundamental semiconductor device with fast switching and low reverse leakage current. Properties of MoS 2-based Schottky devices are str
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