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0905-DD03-06.1

The Fabrication and Characterization of Amorphous Indium Zinc Oxide (In2O3:10wt%ZnO) based Thin Film Transistors Burag Yaglioglu, Hyo-Young Yeom, Roderic Beresford, David C. Paine Brown University, Division of Engineering, Box D Providence, RI 02912

ABSTRACT Thin film transistors were fabricated using amorphous IZO (In2O3-10wt%ZnO) with low carrier concentration (~3x1017/cm3) for the channel material and a-IZO with high carrier concentration (~2x1020/cm3) for source-drain metallization. The performance of a-IZO channel materials processed entirely at room temperature was established using a simple gate-down thin film transistor device. The TFT test structures were fabricated on p-type Si substrates with a thermally grown SiO2 gate oxide. The channel and metallization layers were sputter deposited from a commercially available IZO target at room temperature in a gas atmosphere containing 10 vol.% and 0 vol.% oxygen, respectively. The TFT devices are depletion mode n-channel devices with a high saturation mobility (~20cm2/Vs) and high on/off ratio (~108) and, as such, appear to be well suited for active matrix TFT applications.

INTRODUCTION Amorphous indium zinc oxide (a-IZO; In2O3-10wt% ZnO) thin films are widely used as an alternative to ITO in flat panel display applications where isotropic etch characteristics, amorphous phase structural stability, and easy processing (zero reactive gas) favors its use [1]. In this application, the carrier density in a-IZO is maximized when deposited at room temperature (~2x1020 /cm3) in zero reactive oxygen. While amorphous ITO and IO crystallize at very low temperatures (T