Transparent Transistor Development
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Transparent Transistor Development D. Hong1, N. L. Dehuff1, R. E. Presley1, C. L. Munsee1, J. P. Bender1, C.-H. Park2, J. F. Wager1 and D. A. Keszler2 1 School of Electrical Engineering and Computer Science Oregon State University Corvallis, OR 97331-3211 2 Department of Chemistry Oregon State University Corvallis, OR 97331-4003 ABSTRACT Transparent electronics is an embryonic technology whose objective is the realization of invisible electronic circuits. We have recently reported the fabrication of a novel n-channel transparent thin-film transistor (TTFT). [1] This ZnO-based TTFT is highly transparent and exhibits electrical characteristics that appear to be suitable for implementation as a transparent select-transistor in each pixel of an active-matrix liquid-crystal display. Moreover, the processing technology used to fabricate this device is relatively simple and appears to be compatible with inexpensive glass substrate technology. The objective of the work reported herein is to summarize some of our recent TTFT electrical performance results. Materials, processing, and device structure details related to these devices appear in future publications. INTRODUCTION Although the realization of transparent thin-film transistors (TTFTs) is a recent development, substantial progress has already been made towards improving the performance of these devices. [1-7] Highlights include channel field-effect mobilities of 2 cm2V-1s-1 and 7 cm2V1 -1 s for processing at room temperature and 300˚C, respectively [2,4]; realizing an engineered superlattice TTFT with a field-effect mobility of ~80 cm2V-1s-1 [6]; and fabricating a TTFT via spin-coating synthesis of the channel layer. [7] The purpose of the work reported herein is to summarize some of our recent TTFT electrical performance results. Materials, processing, and device structure details related to these devices will be reported in future publications. DISCUSSION The electrical performance characteristics of four different types of TTFT are summarized. The mobility nomenclature and mobility extraction procedures employed herein are based on the conventions of Shroder. [8] The TTFT devices are fabricated on NEG OA2 glass coated with 10% by weight tin-doped indium oxide (ITO) and aluminum oxide-titanium oxide (ATO) by Planar Systems, Inc., Espoo, Finland. The 220 nm thick layer of ATO has a dielectric constant of approximately 11-16.
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Figure 1. Drain-source current versus drain-source voltage characteristics for TTFT #1. This TTFT has a width-to-length ratio of 5. Curves show an initial triode region leading into a saturation region with a flat drain current with increasing drain-source voltage. VGS is incremented from 0 V to 30 V in 5 V increments. TTFT #1 Figure 1 displays conventional IDS-VDS transistor characteristics for TTFT #1. This device exhibits good saturation at higher drain-source voltages and borderline enhancementmode behavior, i.e. a small amoun
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